MBR40250TG

© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 14
1 Publication Order Number:
MBR40250/D
MBR40250G,
MBR40250TG,
MBRF40250TG,
MBRB40250TG
Switch-mode Schottky
Power Rectifier
250 V, 40 A
Features
250 V Blocking Voltage
Low Forward Voltage Drop, V
F
= 0.86 V
Soft Recovery Characteristic, T
RR
< 35 ns
Stable Switching Performance Over Temperature
These Devices are Pb−Free and are RoHS Compliant
Benefits
Reduces or Eliminates Reverse Recovery Oscillations
Minimizes Need for EMI Filtering
Reduces Switching Losses
Improved Efficiency
Applications
Power Supply
Power Management
Automotive
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Epoxy Meets UL 94 V−0 at 0.125 in
1
3
2, 4
www.onsemi.com
TO−220 (2−LEAD)
CASE 221B
MARKING
DIAGRAMS
AYWW
B40250TG
A K A
B40250 = Device Code
T = 3 pins
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
KA, AKA = Polarity Designator
3
1, 4
TO−220
CASE 221A
T SUFFIX
AYWW
B40250G
K A
1
2
3
4
1
3
4
1
2
3
1
3
2
TO−220 FULLPACKt
CASE 221AH
T SUFFIX
AYWW
B40250TG
A K A
See detailed ordering and shipping information on page 4 o
f
this data sheet.
ORDERING INFORMATION
D
2
PAK 3
CASE 418B
3
4
1
3
1
4
B40250TG
AKA
AY WW
MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
250 V
Average Rectified Forward Current
(Rated V
R
) T
C
= 82°C MBR40250, MBR40250T, MBRB40250T
(Rated V
R
) T
C
= 46°C MBRF40250T
I
F(AV)
40 A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 82°C MBR40250, MBR40250T, MBRB40250T
(Rated V
R
, Square Wave, 20 kHz) T
C
= 46°C MBRF40250T
I
FRM
80 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
150 A
Storage Temperature T
stg
*65 to +175 °C
Operating Junction Temperature T
J
*65 to +150 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Junction−to−Case
MBR40250(T) and MBRB40250T
MBRF40250
Junction−to−Ambient
MBR40250(T)
MBRF40250
MBRB40250T
R
q
JC
R
q
JA
2.0
3.0
60
50
50
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1)
I
F
= 20 A, T
C
= 25°C
I
F
= 20 A, T
C
= 125°C
I
F
= 40 A, T
C
= 25°C
I
F
= 40 A, T
C
= 125°C
V
F
0.86
0.71
0.97
0.86
V
Maximum Instantaneous Reverse Current (Note 1)
Rated DC Voltage, T
C
= 25°C
Rated DC Voltage, T
C
= 125°C
I
R
0.25
30
mA
Maximum Reverse Recovery Time
I
F
= 1.0 A, di/dt = 50 A/ms, T
C
= 25°C
t
rr
35
ns
DYNAMIC CHARACTERISTICS
Capacitance
V
R
= −5.0 V, T
C
= 25°C, Frequency = 1.0 MHz
C
T
500
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG
www.onsemi.com
3
TYPICAL CHARACTERISTICS
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
T
J
= 150°C
1.0E-02
1.0E-01
25 75 125 175 225
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1.0E-07
1
10
100
0.3 0.4 0.6 0.8 1.0
Figure 1. Typical Forward Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
T
J
= 150°C
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
Figure 2. Maximum Forward Voltage
50 100 150 200 250
V
R
, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (A)
0
100
200
300
400
500
600
700
1101
00
T
J
= 25°C
Figure 3. Typical Reverse Current
V
R
, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
Figure 4. Typical Capacitance
1
10
100
0.3 0.5 0.7 0.9 1
.1
V
F
, MAXIMUM FORWARD VOLTAGE (V)
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
T
J
= 150°C
I
F
, MAXIMUM FORWARD CURRENT (A)
0.5 0.7 0.9 0.4 0.6 0.8 1.0
SQUARE WAVE
RATED VOLTAGE
R
q
JC
= 2°C/W
DC
50
60
60 80 100 120 140
40
30
20
10
0
70 90 110 130 150
T
C
, CASE TEMPERATURE (°C)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating (Case) for
MBR40250, MBR40250T and MBRB40250T
Figure 6. Forward Power Dissipation for
MBR40250, MBR40250T and MBRB40250T
0204010 30 50
70
45
55
35
25
15
5
65
MBR40250
MBR40250T
MBRB40250T
SQUARE WAVE
DC
50
30 4
0
40
30
20
10
0
35
I
O
, AVERAGE FORWARD CURRENT (A)
P
F(AV)
, AVERAGE POWER DISSIPATION (W)
0102051525
MBR40250
MBR40250T
MBRB40250T

MBR40250TG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 40A 250
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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