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FCBS0650 Rev. A
FCBS0650 Smart Power Module (SPM)
Internal Equivalent Circuit and Input/Output Pins
Note:
1. Inverter low-side is composed of three MOSFETs, and one control IC. It has gate driving and protection functions.
2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three MOSFETs and three drive ICs for each MOSFET.
Figure 3.
COM
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
N
U
(21)
N
V
(22)
N
W
(23)
U (24)
V (25)
W (26)
P (27)
(20) V
S(W)
(19) V
B(W)
(16) V
S(V)
(15) V
B(V)
(8) C
SC
(7) C
FOD
(6) V
FO
(5) IN
(WL)
(4) IN
(VL)
(3) IN
(UL)
(2) COM
(1) V
CC(L)
VCC
VB
OUT
COM
VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM
VS
IN
(18) V
CC(WH)
(17) IN
(WH)
(14) V
CC(VH)
(13) IN
(VH)
(12) V
S(U)
(11) V
B(U)
(10) V
CC(UH)
(9) IN
(UH)
V
SL
5 www.fairchildsemi.com
FCBS0650 Rev. A
FCBS0650 Smart Power Module (SPM)
Absolute Maximum Ratings (T
J
= 25°C, Unless Otherwise Specified)
Inverter Part
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@T
C
100°C). However, to insure safe operation of the SPM, the average
junction temperature should be limited to T
J(ave)
125°C (@T
C
100°C)
Control Part
Total System
Thermal Resistance
Note:
2. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Package Marking and Ordering Information
Symbol Parameter Conditions Rating Units
V
PN
Supply Voltage Applied between P- N
U
, N
V
, N
W
400 V
V
PN(Surge)
Supply Voltage (Surge) Applied between P- N
U
, N
V
, N
W
450 V
V
DSS
Drain-Source Voltage 500 V
± I
D
Each MOSFET Drain Current T
C
= 25°C, Peak Sinusoidal Current 6 A
± I
DP
Each MOSFET Drain Current (Peak) T
C
= 25°C, Under 1ms Pulse Width 8 A
P
C
Collector Dissipation T
C
= 25°C per One Chip 26.3 W
T
J
Operating Junction Temperature (Note 1) -20 ~ 125 °C
Symbol Parameter Conditions Rating Units
V
CC
Control Supply Voltage Applied between V
CC(UH)
, V
CC(VH)
, V
CC(WH)
, V
CC(L)
-
COM
20 V
V
BS
High-side Control Bias Volt-
age
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
20 V
V
IN
Input Signal Voltage Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, IN
(UL)
, IN
(VL)
,
IN
(WL)
- COM
-0.3~17 V
V
FO
Fault Output Supply Voltage Applied between V
FO
- COM -0.3~V
CC
+0.3 V
I
FO
Fault Output Current Sink Current at V
FO
Pin 5 mA
V
SC
Current Sensing Input Voltage Applied between C
SC
- COM -0.3~V
CC
+0.3 V
Symbol Parameter Conditions Rating Units
T
SC
Short sircuit withstanding time V
CC
= V
BS
= 13.5 ~ 16.5V, T
J
= 125°C,Non-
repetitive,V
PN
=400V, R
Shunt
=0m
10 µs
T
C
Module Case Operation Temperature -20°C T
J
125°C, See Figure 2 -20 ~ 100 °C
T
STG
Storage Temperature -40 ~ 125 °C
V
ISO
Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection
Pins to ceramic substrate
2500 V
rms
Symbol Parameter Conditions Min. Typ. Max. Units
R
th(j-c)
Junction to Case Thermal
Resistance
Inverter MOSFET part (per 1/6 module) - - 3.8 °C/W
Device Marking Device Package Reel Size Tape Width Quantity
FCBS0650 FCBS0650 SPM27BA - - 10
6 www.fairchildsemi.com
FCBS0650 Rev. A
FCBS0650 Smart Power Module (SPM)
Electrical Characteristics (T
J
= 25°C, Unless Otherwise Specified)
Inverter Part
Note:
3. t
ON
and t
OFF
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Symbol Parameter Conditions Min. Typ. Max. Units
R
DS(ON)
Static Drain-Source On
Resistance
V
CC
= V
BS
= 15V
V
IN
= 5V
I
D
=3A, T
J
= 25°C - 1.15 1.55
V
SD
Drain-Source Diode For-
ward Voltage
V
CC
= V
BS
= 15V
V
IN
= 0V
I
D
=3A, T
J
= 25°C - - 1.25 V
HS t
ON
Switching Times V
PN
= 300V, V
CC
= V
BS
= 15V
I
D
= 3A
V
IN
= 0V 5V, Inductive Load
(Note 3)
-0.52- µs
t
C(ON)
-0.19- µs
t
OFF
-0.77- µs
t
C(OFF)
-0.08- µs
t
rr
-0.13- µs
LS t
ON
V
PN
= 300V, V
CC
= V
BS
= 15V
I
D
= 3A
V
IN
= 0V 5V, Inductive Load
(Note 3)
-0.68- µs
t
C(ON)
-0.25- µs
t
OFF
-0.80- µs
t
C(OFF)
-0.07- µs
t
rr
-0.15- µs
I
DSS
Drain - Source
Leakage Current
V
DS
= V
DSS
- - 250 µA
t
ON
t
C(ON)
t
rr
I
rr
10% of I
D
100% of I
D
90% of I
D
100% of I
D
10% of V
DS
(a) Turn-on
t
OFF
t
C(OFF)
(b) Turn-off
I
D
V
DS
V
DS
I
D
V
IN
V
IN
10% of V
DS
10% of I
D

FCBS0650

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
Motor / Motion / Ignition Controllers & Drivers 500V SMART PWR MOD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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