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IXTA180N10T

P1-P3P4-P6
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N10T
IXTP180N10T
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
15
30
45
60
75
90
105
120
135
150
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
25
50
75
100
125
150
175
200
225
250
275
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1.0
10.0
100.0
1,000.0
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
10ms
DC, 100ms
R
DS(
on
)
Limit
© 2008 IXYS CORPORATION, All rights reserved
IXTA180N10T
IXTP180N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
10
15
20
25
30
35
40
45
50
55
60
65
70
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
30
35
40
45
50
55
60
65
70
75
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
30
31
32
33
34
35
36
37
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
43
46
49
52
55
58
61
64
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 50V
25A < I
D
< 50A
I
D
= 25A, 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
30
31
32
33
34
35
36
37
38
25 30 35 40 45 50
I
D
- Amperes
t
f
- Nanoseconds
40
43
46
49
52
55
58
61
64
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
10
15
20
25
30
35
40
45
50
55
60
65
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
20
40
60
80
100
120
140
160
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
40
70
100
130
160
190
220
250
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 25A, 50A
25A < I
D
< 50A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N10T
IXTP180N10T
IXYS REF: T_180N10T(61) 2-02-07-B
Fig. 19. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P6

IXTA180N10T

Mfr. #:
Buy IXTA180N10T
Manufacturer:
Littelfuse
Description:
MOSFET 180 Amps 100V 6.1 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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