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LVB1560-M3/45

P1-P3P4-P4
LVB1560
www.vishay.com
Vishay General Semiconductor
Revision: 26-Jun-13
1
Document Number: 89392
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low V
F
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214, Vol. 1
• Thin single in-Iine package
• Oxide planar chip junction
• Low forward voltage drop
• High surge current capability
• High case dielectric strength of 2500 V
RMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications specially for telecom power
supply, high efficiency desktop PC and server SMPS.
MECHANICAL DATA
Case: GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum
Recommended Torque: 5.7 cm-kg (5 in-lbs)
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB without heatsink
PRIMARY CHARACTERISTICS
Package GSIB-5S
I
F(AV)
15 A
V
RRM
600 V
I
FSM
400 A
I
R
10 μA
V
F
at I
F
= 7.5 A, T
A
= 125 °C 0.73 V
T
J
max. 150 °C
Diode variations In-Line
Case Style GSIB-5S
~
~
~
~
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL LVB1560 UNIT
Maximum repetitive peak reverse voltage V
RRM
600 V
Maximum average forward rectified
output current at
T
C
= 125 °C I
O
(1)
15
A
T
A
= 25 °C I
O
(2)
3.6
Non-repetiitive peak forward surge current 8.3 ms single
sine-wave, T
J
= 25 °C
I
FSM
400 A
Rating for fusing (t < 8.3 ms) T
J
= 25 °C I
2
t 664 A
2
s
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
LVB1560
www.vishay.com
Vishay General Semiconductor
Revision: 26-Jun-13
2
Document Number: 89392
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 40 ms
Notes
(1)
With heatsink
(2)
Without heatsink, free air
Note
(1)
Immunity to IEC 61000-4-5 peak pulse voltage test, 1.2/50 μs, 2 , 5 times each of positive and negative polarity test
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Forward Current Derating Curve
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage I
F
= 7.5 A
T
A
= 25 °C
V
F
(1)
0.87 0.90
V
T
A
= 125 °C 0.73 -
Reverse current per diode V
R
= 600 V
T
A
= 25 °C
I
R
(2)
0.2 10
μA
T
A
= 125 °C 60 -
Typical reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
1.8 - μs
Typical junction capacitance 4.0 V, 1 MHz C
J
260 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL LVB1560 UNIT
Maximum thermal resistance
R
JA
(2)
25
°C/W
R
JC
(1)
1.0
EMC SURGE IMMUNITY TEST STANDARD (T
A
= 25 °C, unless otherwise noted)
STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE
IEC 61000-4-5 Power supply coupling mode, line to line 1.2/50 μs waveform, R = 2 , T
A
= 25 °C
(1)
V
PEAK
-6 kV maximum
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
LVB1560-M3/45 6.9 45 20 Tube
0
15
20
7550250 100 125 150
10
5
With Heatsink, Sine-Wave, R-Load
Temperature (°C)
Average Forward Output Current (A)
T
C
Measurement
Ambient Temperature (°C)
Average Forward Rectified Current (A)
5
4
0
0 25 50 75 100 125 150
3
2
1
Without Heatsink
Sine-wave, R-Load,
Free Air, T
A
LVB1560
www.vishay.com
Vishay General Semiconductor
Revision: 26-Jun-13
3
Document Number: 89392
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Power Dissipation
Fig. 4 - Typical Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in millimeters
Forward Power Dissipation (W)
Average Forward Current ( A )
0
4
8
12
16
20
24
28
0 2 4 6 8 10121416
In
stantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.1
1
10
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
T
A
= 100 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 150 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
T
A
= 150 °C
1000
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100
T
J
= 25 °C
f = 1 MHz
V
stg
= 50 mV
P-P
2.5
±
0.2
2.2
±
0.2
1
±
0.1
10
±
0.2
7.5
±
0.2
4
±
0.2
5
20
±
0.3
17
.
5
±
0.5
11
±
0.2
2.7 ± 0.2
3.5
±
0.2
3.2
±
0.2
0.7 ± 0.1
4.6
±
0.2
3.6
±
0.2
+
7.5
±
0.2
30
±
0.3
Case Style GSIB-5S
P1-P3P4-P4

LVB1560-M3/45

Mfr. #:
Buy LVB1560-M3/45
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers 15 Amps 600 Volts
Lifecycle:
New from this manufacturer.
Delivery:
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