830 series
Issue 11 - January 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Tuning characteristics at T
amb
= 25°C
Absolute maximum ratings
Electrical characteristics at T
amb
= 25°C
Part Capacitance (pF)
V
R
=2V, f=1MHz
Min Q
V
R
= 3V
f = 50MHz
Capacitance ratio
C
2
/ C
20
@ f = 1MHz
Min. Nom. Max. Min. Max.
829A 7.38 8.2 9.02 250 4.3 5.8
829B 7.79 8.2 8.61 250 4.3 5.8
830A 9.0 10.0 11.0 300 4.5 6.0
830B 9.5 10.0 10.5 300 4.5 6.0
831A 13.5 15.0 16.5 300 4.5 6.0
831B 14.25 15.0 15.75 300 4.5 6.0
832A 19.8 22.0 24.2 200 5.0 6.5
832B 20.9 22.0 23.1 200 5.0 6.5
833A 29.7 33.0 36.3 200 5.0 6.5
833B 31.35 33.0 34.65 200 5.0 6.5
834A 42.3 47.0 51.7 200 5.0 6.5
834B 44.65 47.0 49.35 200 5.0 6.5
835A 61.2 68.0 74.8 100 5.0 6.5
835B 64.6 68.0 71.4 100 5.0 6.5
836A 90.0 100.0 110.0 100 5.0 6.5
836B 95.0 100.0 105.0 100 5.0 6.5
Parameter Symbol Max. Unit
Forward current I
F
200 mA
Power dissipation at T
amb
= 25°C SOT23 P
tot
330 mW
Power dissipation at T
amb
= 25°C SOD323 P
tot
330 mW
Power dissipation at T
amb
= 25°C SOD523 P
tot
250 mW
Operating and storage temperature range -55 to +150 °C
Paramater Conditions Min. Typ. Max. Unit
Reverse breakdown voltage I
R
= 10A25 V
Reverse voltage leakage V
R
= 20V 0.2 20 nA
Temperature coefficient of
capacitance
V
R
= 3V, f = 1MHz 300 400 ppCm/°C