SCMD4D10C
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1. Magnetically shielded construction – Low EMI
2 Excellent Power Density
3 Engineered to Provide High Efficiency
ELECTRICAL CHARACTERISTICS
Part Number
Inductance
(uH)
(1)
Test
Frequency
DC Resistance
(Ω MAX)
(2)
Saturation
Current
(A)
Temperature
Current
(A)
SCMD4D10C-3R3 3.3 100KHZ 0.20 1.37 1.16
SCMD4D10C-4R7 4.7 100KHZ 0.28 1.12 0.96
SCMD4D10C-6R8 6.8 100KHZ 0.38 1.10 0.80
SCMD4D10C-100 10 100KHZ 0.60 0.82 0.64
SCMD4D10C-150 15 100KHZ 0.90 0.67 0.50
SCMD4D10C-220 22 100KHZ 1.30 0.55 0.42
SCMD4D10C-330 33 100KHZ 1.75 0.45 0.36
SCMD4D10C-470 47 100KHZ 2.80 0.40 0.30
(1). Inductance tolerance±20% tested at 0.25V, 0ADC and 25℃.
(2). DCR measured at 25℃.
(3). The DC current at which the inductance decreases by 10% from its initial value.
(4). The DC current that results in a 40℃ temperature rise from 25℃ ambient.
(4)
XXX
(3)
10
100
1000
100
1000
10000
10
BCMD4D10C I nduct ance decr ease by cur r ent
I nduct ance( uH)
100000
DC c u r r e n t ( mA)
1
0. 1
470
100
3 R3
Temper at ur e r i se ℃
BCMD4D10C Temper at ur e r i se by cur r ent
DC c u r r e n t ( mA)
80
50
70
40
60
30
20
10
800 1200
200
400
600
14001000
1600
0
1800
470
100
3 R3
SCMD4D10C Inductance decrease by current
DC current (mA)
SCMD4D10C Temperature rise by current
DC current (mA)
Custom versions available upon request.
©2011 Signal Transformer –Specification subject to change without notice. 07.11
