IXTT12N140 Datasheet IXTT12N140 | P1-P3

DS100344(05/11)

High Voltage

Power MOSFETs

Features

z

International Standard Packages

z

Molding Epoxies Weet UL 94 V-0

Flammability Classification

z

Fast Intrinsic Diode

z

Low Package Inductance

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

High Voltage Power Supplies

z

Capacitor Discharge

z

Pulse Circuits

IXTT12N140

IXTH12N140

V

DSS

= 1400V

I

D25

= 12A

R

DS(on)

≤≤

≤

2

ΩΩ

Ω

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1400 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 1400 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C12A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

40 A

I

A

T

C

= 25°C 6 A

E

AS

T

C

= 25°C 750 mJ

P

D

T

C

= 25°C 890 W

T

J

- 55 ... +150 °C

T

JM

150 °C

T

stg

- 55 ... +150 °C

T

L

1.6mm (0.062 in.) From Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque 1.13 / 10 Nm/lb.in.

Weight TO-268 4.0 g

TO-247 6.0 g

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Advance Technical Information

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 1400 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 2.5 4.5 V

I

GSS

V

GS

= ±20V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 μA

T

J

= 125°C 500 μA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 2 Ω

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

G

S

D (Tab)

D

TO-268 (IXTT)

S

G

D (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTT12N140

IXTH12N140

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 2Ω (External)

Note 1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 8 13 S

C

iss

3720 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 240 pF

C

rss

80 pF

t

d(on)

26 ns

t

r

16 ns

t

d(off)

53 ns

t

f

14 ns

Q

g(on)

106 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

17 nC

Q

gd

50 nC

R

thJC

0.14 °C/W

R

thCS

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 12 A

I

SM

Repetitive, Pulse Width Limited by T

JM

48 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

1.2 μs

I

RM

24.5

A

Q

RM

14.8 μC

I

F

= 6A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= 0V

TO-247 Outline

Terminals: 1 - Gate 2 - Drain

3 - Source

TO-268 Outline

Terminals: 1 - Gate 2,4 - Drain

3 - Source

e

∅ P

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

2

4

6

8

10

12

14

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6

V

5.5

V

5

V

Fig. 2. Output Characteristics @ T

J

= 125ºC

0

1

2

3

4

5

6

7

8

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

5V

4V

V

GS

= 10V

6V

Fig. 3. R

DS(on)

Normalized to I

D

= 6A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 12A

I

D

= 6A

Fig. 4. R

DS(on)

Normalized to I

D

= 6A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

02468101214

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Input Admittance

0

2

4

6

8

10

12

14

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 5. Maximum Drain Current vs.

Case Temperature

0

2

4

6

8

10

12

14

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXTT12N140

IXTH12N140

IXTT12N140

IXTT12N140

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