ZXMN2A01FTA Datasheet ZXMN2A01FTA, ZXMN2A01FTC | P1-P3

ZXMN2A01F

ADVANCED INFORMATION

D

S

G

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(ON)

I

D

T

A

= +25°C

20V

0.12Ω @ V

GS

= 10V

2.2A

Description

This new generation MOSFET is designed to minimize the on-

state

resistance (R

DS(ON)

) and yet maintain superior switching performance,

making it ideal for high efficiency power management applications.

Applications

• DC-DC Converters

• Power Management Functions

• Motor Control

Features

• Low On-Resistance

• Fast Switching Speed

• Low Threshold

• Low Gate Drive

• Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead-free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

ZXMN2A01FTA

SOT23

3,000/Tape & Reel

ZXMN2A01FTC

SOT23

10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

e3

Top View

D

G

S

Top View

Pin Configuration

Equivalent Circuit

7N2 = Product Type Marking Code

7N2

ZXMN2A01F

Document number: DS33513 Rev. 4 - 2

1 of 7

www.diodes.com

August 2014

ZXMN2A01F

ADVANCED INFORMATION

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

V

DSS

20

V

Gate-Source Voltage

V

GSS

±

12

V

Continuous Drain Current, V

GS

= 10V

(Note 6)

(Note 5)

T

A

= +25°C

T

A

= +70°C

T

A

= +25°C

I

D

2.2

1.7

1.9

A

Pulsed Drain Current (Note 7)

I

DM

8

A

Maximum Body Diode Continuous Current (Note 6)

I

S

1.29

A

Maximum Body Diode Continuous Current (Note 7)

I

SM

8

A

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation

Linear Derating Factor

(Note 5)

P

D

625

mW

5

mW/°C

Total Power Dissipation

Linear Derating Factor

(Note 6)

P

D

806

mW

6.4

mW/°C

Thermal Resistance, Junction to Ambient

(Note 5)

R

θJA

200

°C/W

(Note 6)

155

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6. For a device surface mounted on FR-4 PCB measured at t

≦5 secs.

7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature. Refer to Transient

Thermal Impedance graph.

ZXMN2A01F

Document number: DS33513 Rev. 4 - 2

2 of 7

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August 2014

ZXMN2A01F

ADVANCED INFORMATION

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV

DSS

20



V

GS

= 0V,

I

D

= 250µA

Zero Gate Voltage Drain Current

I

DSS



1

µA

V

DS

= 20V,

V

GS

= 0V

Gate-Body Leakage

I

GSS



100

nA

V

GS

=

±

12V,

V

DS

= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

V

GS(th)

0.7



V

DS

= V

GS

,

I

D

= 250µA

Static Drain-Source On-Resistance (Note 8)

R

DS(ON)



0.12

Ω

V

GS

= 4.5V,

I

D

=

4A



0.225

Ω

V

GS

= 2.5V,

I

D

=

1.5A

Forward Transconductance

g

FS



6.1



S

V

DS

= 10V,

I

D

=

4A

Diode Forward Voltage (Note 8 & 10)

V

SD



0.85

0.95

V

GS

= 0V, I

S

= 3.2A, T

J

= +25°C

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

C

iss



303



pF

V

DS

= 15V, V

GS

= 0V,

f = 1MHz

Output Capacitance

C

oss



59



Reverse Transfer Capacitance

C

rss



30



Total Gate Charge (Note 9)

Q

g



3.0



nC

V

DS

= 10V, V

GS

= 10V,

I

D

= 4A

Gate-Source Charge (Note 9)

Q

gs



0.8



Gate-Drain Charge (Note 9)

Q

gd



1.0



Turn-On Delay Time (Note 9)

t

D(on)



2.49



ns

V

DD

= 10V , I

D

=4A,

R

G

= 6Ω, V

GS

= 5V

Turn-On Rise Time (Note 9)

t

r



5.21



Turn-Off Delay Time (Note 9)

t

D(off)



7.47



Turn-Off Fall Time (Note 9)

t

f



4.62



Reverse Recovery Time

t

rr



23



ns

T

J

= +25°C, I

F

= 4A, di/dt= 100A/µs

Reverse Recovery Charge

Qrr



5.65



nC

Notes: 8. Measured under pulsed conditions. Width=300μs. Duty cycle ≦ 2%.

9. Switching characteristics are independent of operating junction temperature.

10. Guaranteed by design. Not subject to production testing.

ZXMN2A01F

Document number: DS33513 Rev. 4 - 2

3 of 7

www.diodes.com

August 2014

ZXMN2A01FTA

ZXMN2A01FTA

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