2SK1317
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
1500 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
2.5 A
Drain peak current I
D(pulse)
*1
7 A
Body to drain diode reverse drain current I
DR
2.5 A
Channel dissipation Pch
*2
100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
C
= 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
1500 — — V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
— — ±1 µA V
GS
= ±20 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — 500 µA V
DS
= 1200 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
2.0 — 4.0 V I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
— 9 12 Ω I
D
= 2 A, V
GS
= 15 V *
3
Forward transfer admittance |y
fs
| 0.45 0.75 — S I
D
= 1 A, V
DS
= 20 V *
3
Input capacitance Ciss — 990 — pF
Output capacitance Coss — 125 — pF
Reverse transfer capacitance Crss — 60 — pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Turn-on delay time t
d(on)
— 17 — ns
Rise time t
r
— 70 — ns
Turn-off delay time t
d(off)
— 110 — ns
Fall time t
f
— 60 — ns
I
D
= 2 A, V
GS
= 10 V,
R
L
= 15 Ω
Body to drain diode forward voltage V
DF
— 0.9 — V I
F
= 2 A, V
GS
= 0
Body to drain diode reverse recovery
time
t
rr
— 1750 — ns I
F
= 2 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Note: 3. Pulse test
