APT12F60K

e3 100% Sn Plated
TO-220 (K) Package Outline
Dimensions in Inches and (Millimeters)
Source
Gate
Drai
n
Drai n
1ms
100ms
R
ds(on)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Scaling for Different Case & Junction
Temperatures:
I
D
= I
D(T
C
= 25
°
C)
*(T
J
- T
C
)/125
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
t
1
= Pulse Duration
DC line
100μs
I
DM
10ms
13μs
100μs
I
DM
100ms
10ms
13μs
R
ds(on)
DC line
T
J
= 150°C
T
C
= 25°C
1ms
T
J
= 125°C
T
C
= 75°C
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V) V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
I
D
, DRAIN CURRENT (A)
1 10 100 800 1 10 100 800
60
10
1
0.1
60
10
1
0.1
0.60
0.50
0.40
0.30
0.20
0.10
0
APT12F60K
050-8146 Rev D 8-2011

APT12F60K

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
MOSFET Power FREDFET - MOS8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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