IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA34N65X2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 34 A
I
SM
Repetitive, pulse Width Limited by T
JM
136 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
390 ns
Q
RM
4.2 μC
I
RM
21.8 A
I
F
= 17A, -di/dt = 100A/μs
V
R
= 100V
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 20 33 S
R
Gi
Gate Input Resistance 0.90
C
iss
3000 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 2180 pF
C
rss
1.7 pF
C
o(er)
125 pF
C
o(tr)
490 pF
t
d(on)
30 ns
t
r
48 ns
t
d(off)
68 ns
t
f
30 ns
Q
g(on)
54 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
15 nC
Q
gd
20 nC
R
thJC
0.23 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 10 (External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
TO-263 (IXTA) Outline
1 = Gate
2 = Drain
3 = Source
4 = Drain
Note: 1. Pulse test, t 300s, duty cycle, d 2%.