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DTC115EM3T5G

P1-P3P4-P6P7-P9P10-P10
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
www.onsemi.com
4
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
− − 500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
− − 0.05
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
80 150 −
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
− − 0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 1.2 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 1.0 mA)
V
i(on)
3.0 1.7 −
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 70 100 130
kW
Resistor Ratio R
1
/R
2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
www.onsemi.com
5
TYPICAL CHARACTERISTICS
MUN2236, MMUN2236L, MUN5236, NSVMUN5236, DTC115EE, DTC115EM3
100
1
0.1
0102030355
100
10
0510
2.8
2.4
1.6
1.2
0.8
0.4
0
01020304050
V
R
, REVERSE VOLTAGE (V)
Figure 2. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
010203040
Figure 3. DC Current Gain
0.1 1 10
0
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (V)
Figure 6. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
V
CE
= 10 V
1000
100
10
10
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
T
A
= −25°C
25°C
75°C
75°C
25°C
T
A
= −25°C
V
O
= 5 V
V
O
= 0.2 V
T
A
= −25°C
25°C
75°C
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V
)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
T
A
= −25°C
25°C
75°C
C
ob
, CAPACITANCE (pF)
3.6
3.2
15 20 25 30 35 4
0
1
0.1
I
C
, COLLECTOR CURRENT (mA)
15 25
10
V
in
, INPUT VOLTAGE (V)
5152535
2.0
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
www.onsemi.com
6
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031
ǒ
mm
inches
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b 0.35 0.43 0.50 0.014
c 0.09 0.14 0.18 0.003
D 2.70 2.90 3.10 0.106
E 1.30 1.50 1.70 0.051
e 1.70 1.90 2.10 0.067
L 0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
H
E
P1-P3P4-P6P7-P9P10-P10

DTC115EM3T5G

Mfr. #:
Buy DTC115EM3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
Lifecycle:
New from this manufacturer.
Delivery:
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