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BCR 191L3 E6327
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
2006-05-03
1
BCR191...
PNP Silicon Digital Transistor
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Built in bias resistor (
R
1
= 22 k
Ω
,
R
2
= 22 k
Ω
)
BCR191/F/L3
BCR191T/W
EHA07183
3
2
1
C
E
B
R
1
R
2
Type
Marking
Pin Configuration
Package
BCR191
BCR191F
BCR191L3
BCR191T
BCR191W
WOs
WOs
WO
WO
WOs
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
2006-05-03
2
BCR191...
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
50
V
Collector-base voltage
V
CBO
50
Input forward voltage
V
i
(
fwd
)
60
Input reverse voltage
V
i
(
rev
)
10
Collector current
I
C
100
mA
Total power dissipation-
BCR191,
T
S
≤
102°C
BCR191F,
T
S
≤
128°C
BCR191L3,
T
S
≤
135°C
BCR191T,
T
S
≤
109°C
BCR191W,
T
S
≤
124°C
P
tot
200
250
250
250
250
mW
Junction temperature
T
j
150
°C
Storage temperature
T
st
g
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BCR191
BCR191F
BCR191L3
BCR191T
BCR191W
R
thJS
≤
240
≤
90
≤
60
≤
165
≤
105
K/W
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2006-05-03
3
BCR191...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 µA,
I
B
= 0
V
(BR)CEO
50
-
-
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
50
-
-
Collector-base cutoff current
V
CB
= 40 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
I
EBO
-
-
350
µA
DC current gain
1)
I
C
= 5 mA,
V
CE
= 5 V
h
FE
50
-
-
-
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
V
CEsat
-
-
0.3
V
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
V
i(off)
0.8
-
1.5
Input on voltage
I
C
= 2 mA,
V
CE
= 0.3 V
V
i(on)
1
-
2.5
Input resistor
R
1
15
22
29
k
Ω
Resistor ratio
R
1
/
R
2
0.9
1
1.1
-
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
-
200
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
3
-
pF
1
Pulse test: t < 300µs; D < 2%
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BCR 191L3 E6327
Mfr. #:
Buy BCR 191L3 E6327
Manufacturer:
Infineon Technologies
Description:
TRANS PREBIAS PNP 250MW TSLP-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
TNT
EMS
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