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STTH3L06U

P1-P3P4-P6P7-P9P10-P11
April 2016
DocID8322 Rev 4
1/11
This is information on a product in full production.
www.st.com
STTH3L06
Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
Features
Ultrafast switching
Low forward voltage drop
Low thermal resistance
Low leakage current (platinum doping)
Description
This device uses ST Turbo 2 600 V technology,
and is particularly suited as boost diode in
discontinuous or critical mode power factor
corrections.
It is also intended for use as a freewheeling diode
in power supplies and other power switching
applications.
Table 1: Device summary
Symbol
I
F(AV)
3 A
V
RRM
600 V
I
R
(max.)
100 µA
T
j
(max.)
175 °C
V
F
(typ.)
0.85 V
t
rr
(typ.)
60 ns
Table 2: Order codes
Part number
Marking
STTH3L06
STTH3L06
STTH3L06U
3L6U
STTH3L06S
S06
SMB
K
K
A
SMC
A
K
A
DO-201AD
Characteristics
STTH3L06
2/11
DocID8322 Rev 4
1 Characteristics
Table 3: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
Forward rms current
10
A
I
F(AV)
Average forward current δ =
0.5, square wave
DO-201AD/SMC
TI = 100 °C
3
A
SMB
TI = 80 °C
I
FSM
Surge non repetitive forward current, t
p
= 10 ms
sinusoidal
DO-201AD
70
A
SMB/SMC
60
A
T
stg
Storage temperature range
-65 to +175
°C
T
j
Maximum operating junction temperature
+175
°C
Table 4: Thermal parameters
Symbol
Parameter
Maximum
Unit
R
th(j-l)
Junction to lead
DO-201AD L = 10 mm
20
°C/W
SMB
25
SMC
20
R
th(j-a)
Junction to ambient
DO-201AD L = 10 mm
75
Table 5: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
3
µA
T
j
= 150 °C
-
15
100
V
F
Forward voltage drop
T
j
= 25 °C
I
F
= 3 A
-
1.3
V
T
j
= 150 °C
-
0.85
1.05
To evaluate the conduction losses use the following equation:
P = 0.89 x I
F(AV)
+ 0.055 I
F
2
(RMS)
Table 6: Dynamic characteristics
Symbol
Parameters
Test conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse
recovery time
T
j
= 25 °C
I
F
= 1 A; dI
F
/dt = -50 A/μs;
V
R
= 30 V
-
60
85
ns
t
fr
Forward
recovery time
T
j
= 25 °C
I
F
= 3 A; dI
F
/dt = 100
A/μs; V
FR
= 1.1 x V
Fmax
-
100
V
FP
Forward
recovery
voltage
I
F
= 3 A; dl
F
/dt = 100 A/µs
-
7.5
V
STTH3L06
Characteristics
DocID8322 Rev 4
3/11
1.1 Characteristics (curves)
Figure 1: Conduction losses versus average
current
Figure 2: Forward voltage drop versus forward
current
Figure 3: Relative variation of thermal impedance
junction ambient versus pulse duration
(epoxy printed circuit FR4, e
CU
= 35 µm)
Figure 4: Peak reverse recovery current versus
dI
F
/dt (typical values)
Figure 5: Reverse recovery time versus dI
F
/dt
(typical values)
Figure 6: Reverse recovery charges versus dI
F
/ dt
(typical values)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I
F(AV)
(A)
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
δ = 1
T
= tp/T
tp
δ
P(W)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
FM
(V)
T
j
= 25 °C
(Maximum values)
T
j
= 150 °C
(Maximum values)
T
j
= 150 °C
(Typical values)
I
FM
(A)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t
P
(s)
Single pulse
DO-201AD
L
leads
=10mm
Z
th(j-a)
/R
th(j-a)
0
2
4
6
8
10
12
14
16
18
20
0 50 100 150 200 250 300 350 400 450 500
dI
F
/dt(A/µs)
V
R
= 400 V
T
j
= 125° C
I
F
= 2 x I
F(AV)
I
F
= 0.5 x I
F(AV)
I
F
= I
F(AV)
I
F
= 0.25 x I
F(AV)
I
RM
(A)
0
100
200
300
400
500
600
700
0 20 40 60 80 100 120 140 160 180 200
dI
F
/dt(A/µs)
I
F
= I
F(AV)
I
F
= 0.5 x I
F(AV)
I
F
= 2 x I
F(AV)
V
R
= 400 V
T
j
= 125 °C
t
RR
(ns)
0
50
100
150
200
250
300
350
400
450
500
0 20 40 60 80 100 120 140 160 180 200
dI
F
/dt(A/µs)
I
F
= I
F(AV)
I
F
= 0.5 x I
F(AV)
I
F
= 2 x I
F(AV)
V
R
= 400 V
T
j
= 125 °C
Q
RR
(nC)
P1-P3P4-P6P7-P9P10-P11

STTH3L06U

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Manufacturer:
STMicroelectronics
Description:
Rectifiers RECTIFIER
Lifecycle:
New from this manufacturer.
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