P0118MA 2AL3

January 2009 Rev 1 1/9
9
P011xx
Sensitive high immunity SCRs up to 0.8 A
Features
I
T(RMS)
up to 0.8 A
V
DRM
/V
RRM
400 and 600 V
I
GT
from 0.5 to 25 µA
Description
Thanks to highly sensitive triggering levels, the
P011xx SCR series is suitable for all applications
where available gate current is limited, such as
ground fault circuit interruptors, pilot circuits in
solid state relays, standby mode power supplies,
smoke and alarm detectors.
Available in through-hole or surface-mount
packages, the voltage capability of this series has
been upgraded since its introduction and is now
available up to 600 V.
TO-92
(P011xxA)
SOT-223
(P011xxN)
A
K
G
A
A
K
G
A
K
G
Table 1. Device summary
Order code
Voltage Sensitivity
Package
400 V 600 V Min. Max.
P0111DA 1AA3 X 4 µA 25 µA TO-92
P0111DA 5AL3 X 4 µA 25 µA TO-92
P0111DN 5AA4 X 4 µA 25 µA SOT-223
P0111MA 1AA3 X 4 µA 25 µA TO-92
P0111MA2AL3
(1)
X 4 µA 25 µA TO-92
P0111MN 5AA4 X 4 µA 25 µA SOT-223
P0115DA 1AA3 X 15 µA 50 µA TO-92
P0115DA 5AL3 X 15 µA 50 µA TO-92
P0118DA 1AA3 X 0.5 µA 5 µA TO-92
P0118DA 5AL3 X 0.5 µA 5 µA TO-92
P0118DN 5AA4 X 0.5 µA 5 µA SOT-223
P0118MA 2AL3 X 0.5 µA 5 µA TO-92
P0118MA 5AL3 X 0.5 µA 5 µA TO-92
1. This order code has no space.
www.st.com
Characteristics P011xx
2/9
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (180° conduction angle)
TO-92 T
l
= 55 °C
0.8 A
SOT-223 T
amb
= 70 °C
IT
(AV)
Average on-state current (180° conduction angle)
TO-92 T
l
= 55 °C
0.5 A
SOT-223 T
amb
= 70 °C
I
TSM
Non repetitive surge peak on-state current
t
p
= 8.3 ms
T
j
= 25 °C
8
A
t
p
= 10 ms 7
I
²
tI
²
t Value for fusing t
p
= 10 ms T
j
= 25 °C 0.24 A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
100 ns
F = 60 Hz T
j
= 125 °C 50 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 1 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 0.1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions P0111 P0115 P0118 Unit
I
GT
V
D
= 12 V R
L
= 140 Ω
Min. 4 15 0.5
µA
Max. 25 50 5
V
GT
Max. 0.8 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ R
GK
= 1 kΩ T
j
= 125 °C Min. 0.1 V
V
RG
I
RG
= 10 µA Min. 8 V
I
H
I
T
= 50 mA R
GK
= 1 kΩ Max. 5 mA
I
L
I
G
= 1 mA R
GK
= 1 kΩ Max. 6 mA
dV/dt V
D
= 67 % V
DRM
R
GK
= 1 kΩ T
j
= 125 °C Min. 80 75 75 V/µs
V
TM
I
TM
= 1.6 A tp = 380 µs T
j
= 25 °C Max. 1.95 V
V
t0
Threshold voltage T
j
= 125 °C Max. 0.95 V
R
d
Dynamic resistance T
j
= 125 °C Max. 600 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
= 400 V R
GK
= 1 kΩ
T
j
= 25 °C
Max.
1
µAV
DRM
= V
RRM
= 600 V R
GK
= 1 kΩ 10
V
DRM
= V
RRM
R
GK
= 1 kΩ T
j
= 125 °C 100
P011xx Characteristics
3/9
Table 4. Thermal resistance
Symbol Parameter Maximum Unit
R
th(j-a)
Junction to case (DC) TO-92 80 °C/W
R
th(j-t)
Junction to tab (DC) SOT-223 30 °C/W
R
th(j-a)
Junction to ambient (DC)
TO-92 150
°C/W
S
(1)
= 5 cm
2
SOT-223 60
1. S = Copper surface under tab.
Figure 1. Maximum average power
dissipation versus average on-state
current
Figure 2. Average and DC on-state current
versus lead temperature
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P(W)
α = 180°
360°
α
I (A)
T(AV)
0 25 50 75 100 125
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
I (A)
T(AV)
T (°C)
lead
α
= 180° (SOT-223)
α
= 180° (TO-92)
D.C. (SOT-223)
D.C. (TO-92)
Figure 3. Average and DC on-state current
versus ambient temperature
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration
0 25 50 75 100 125
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I (A)
T(AV)
T (°C)
amb
α = 180° (SOT-223)
α = 180° (TO-92)
D.C. (SOT-223)
D.C. (TO-92)
Device mounted on FR4 with
recommended pad layout
1E-2 1E-1
1E+0
1E+1 1E+2
5E+2
0.01
0.10
1.00
K=[Z /R
th(j-a) th(j-a)
]
t (s)
p
SOT-223
TO-92

P0118MA 2AL3

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
SCRs 0.8 Amp 600 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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