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IRFB61N15DPBF

P1-P3P4-P6P7-P9
Notes through are on page 8
www.irf.com 1
8/2/04
IRFB61N15DPbF
SMPS MOSFET
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max I
D
150V 0.032Ω 60A
PD- 95621
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 60
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 42 A
I
DM
Pulsed Drain Current 250
P
D
@T
A
= 25°C Power Dissipation 2.4 W
P
D
@T
C
= 25°C Power Dissipation 330
Linear Derating Factor 2.2 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 3.7 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
l Lead-Free
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.45
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
IRFB61N15DPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 22 ––– ––– S V
DS
= 50V, I
D
= 37A
Q
g
Total Gate Charge ––– 95 140 I
D
= 37A
Q
gs
Gate-to-Source Charge ––– 26 39 nC V
DS
= 120V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 45 68 V
GS
= 10V,
t
d(on)
Turn-On Delay Time ––– 18 ––– V
DD
= 75V
t
r
Rise Time ––– 110 ––– I
D
= 37A
t
d(off)
Turn-Off Delay Time ––– 28 ––– R
G
= 1.8Ω
t
f
Fall Time ––– 51 ––– V
GS
= 10V
C
iss
Input Capacitance ––– 3470 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 690 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 150 ––– pF ƒ = 1.0MHz
C
oss
Output Capacitance ––– 4600 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 310 ––– V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 580 ––– V
GS
= 0V, V
DS
= 0V to 120V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 520 mJ
I
AR
Avalanche Current ––– 37 A
E
AR
Repetitive Avalanche Energy ––– 33 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 37A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 180 270 ns T
J
= 25°C, I
F
= 37A
Q
rr
Reverse RecoveryCharge ––– 1340 2010 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
60
250
A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.18 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.032 Ω V
GS
= 10V, I
D
= 36A
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.5 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 25
µA
V
DS
= 150V, V
GS
= 0V
––– ––– 250 V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 30V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -30V
I
GSS
I
DSS
Drain-to-Source Leakage Current
IRFB61N15DPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
62A
0.01
0.1
1
10
100
1000
4 6 8 10 12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
P1-P3P4-P6P7-P9

IRFB61N15DPBF

Mfr. #:
Buy IRFB61N15DPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC
Lifecycle:
New from this manufacturer.
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