13
FN7119.8
August 27, 2015
Unused Amplifiers
It is recommended that any unused amplifiers in a dual and
a quad package be configured as a unity gain follower. The
inverting input should be directly connected to the output
and the non-inverting input tied to the ground plane.
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5111, EL5211, and EL5411 can provide gain at high
frequency. As with any high-frequency device, good printed
circuit board layout is necessary for optimum performance.
Ground plane construction is highly recommended, lead
lengths should be as short as possible and the power supply
pins must be well bypassed to reduce the risk of oscillation.
For normal single supply operation, where the V
S
- pin is
connected to ground, a 0.1µF ceramic capacitor should be
placed from V
S
+ to pin to V
S
- pin. A 4.7µF tantalum
capacitor should then be connected in parallel, placed in the
region of the amplifier. One 4.7µF capacitor may be used for
multiple devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are to be
used.
FIGURE 33. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 34. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 35. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 36. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY (SINGLE LAYER) TEST BOARD
POWER DISSIPATION (W)
0.300
0.250
0.200
0.150
0.100
0.050
0.000
0.350
AMBIENT TEMPERATURE (°C)
0 25 50 75 100 12585 150
290mW
TSOT5
JA
= +345°C/W
0.6
0.5
0.4
0.3
0.2
0.1
0.0
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LAYER) TEST BOARD
483mW
TSOT5
AMBIENT TEMPERATURE (°C)
POWER DISSIPATION (W)
0 25 50 75 100 12585 150
JA
= +207°C/W
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.6
0.4
0.3
0.2
0.1
0
0 25 50 75 100 125
AMBIENT TEMPERATURE (°C)
POWER DISSIPATION (W)
85
486mW
J
A
=
+
2
0
6
°
C
/
W
H
M
S
O
P
8
0.5
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1
0.9
0.6
0.4
0.3
0.2
0.1
0
0 25 50 75 100 125
AMBIENT TEMPERATURE (°C)
POWER DISSIPATION (W)
85
870mW
J
A
=
+
1
1
5
°
C
/
W
H
M
S
O
P
8
0.8
0.5
0.7
EL5111, EL5211, EL5411
