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IXFN200N07

P1-P2
© 2003 IXYS All rights reserved
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or New Designor New Design
or New Designor New Design
or New Design
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C N07 70 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ N06 60 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C; Chip capability 200N06/200N07 200 A
I
L(RMS)
Terminal current limit 100 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
600 A
I
AR
T
C
= 25°C 100 A
E
AR
T
C
= 25°C30mJ
E
AS
T
C
= 25°C 2J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 5 V/ns
T
J
≤ 150°C, R
G
= 2 Ω
P
D
T
C
= 25°C 520 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
V
ISOL
50/60 Hz, RMS t = 1 min - 2500 V~
I
ISOL
≤ 1 mA t = 1 s - 3000 V~
M
d
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA N06 60 V
N07 70 V
V
GS (th)
V
DS
= V
GS
, I
D
= 8 mA 2 4 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±200 nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J
= 25°C 400 µA
V
GS
= 0 V T
J
= 125°C2mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 • I
D25
6mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
z
International standard packages
z
miniBLOC with Aluminium nitride
isolation
z
Low R
DS (on)
HDMOS
TM
process
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Synchronous rectification
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
Temperature and lighting controls
z
Low voltage relays
Advantages
z
Easy to mount
z
Space savings
z
High power density
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
DS97533B(02/03)
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
I
D25
R
DS(on)
IXFN 200 N06 60 V 200 A 6 m
ΩΩ
ΩΩ
Ω
IXFN 200 N07 70 V 200 A 6 m
ΩΩ
ΩΩ
Ω
t
rr
≤ ≤
≤ ≤
≤ 250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 200N06 IXFN 200N07
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test 60 80 S
C
iss
9000 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 4000 pF
C
rss
2400 pF
t
d(on)
30 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
60 ns
t
d(off)
R
G
= 1 Ω (External), 100 ns
t
f
60 ns
Q
g(on)
480 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
60 nC
Q
gd
240 nC
R
thJC
miniBLOC, SOT-227 B 0.24 K/W
R
thCK
miniBLOC, SOT-227 B 0.05 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 200 A
I
SM
Repetitive; pulse width limited by T
JM
600 A
V
SD
I
F
= 100 A, V
GS
= 0 V, 1.7 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
150 250 ns
Q
RM
0.7 µC
I
RM
9A
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
miniBLOC, SOT-227 B
I
F
= 25 A
-di/dt = 100 A/µs,
V
R
= 50 V
P1-P2

IXFN200N07

Mfr. #:
Buy IXFN200N07
Manufacturer:
Littelfuse
Description:
MOSFET 70V 200A
Lifecycle:
New from this manufacturer.
Delivery:
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