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IXTH48P20P
P1-P3
P4-P5
IXTH48P20P
IXTT48P20P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 7. Input A
dm
itta
nce
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-7.5
-7.0
-6.5
-6.0
-5.5
-5
.0
-4.5
-4.0
-3.5
V
GS
- Vol
ts
I
D
- A
m
pe
res
T
J
= -
40ºC
25º
C
125ºC
Fig. 8. Transconduc
tanc
e
0
5
10
15
20
25
30
35
40
45
50
55
60
-90
-8
0
-70
-6
0
-50
-40
-3
0
-2
0
-10
0
I
D
- Am
p
eres
g
f s
- Siem
ens
T
J
= -
40ºC
125ºC
25ºC
Fi
g.
9. F
or
war
d Vo
ltag
e Dr
op
of
Intrins
ic Diode
-160
-140
-120
-100
-80
-60
-40
-20
0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
V
SD
- Vo
l
ts
I
S
- A
m
pe
re
s
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. G
at
e Char
ge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
1
02
03
04
05
06
07
08
09
0
1
0
0
1
1
0
Q
G
-
N
a
no
C
o
ulombs
V
GS
- V
olts
V
DS
= -
100V
I
D
= - 24A
I
G
= -1
m
A
Fig. 11
. Capac
ita
nce
100
1,000
10,000
-40
-35
-3
0
-25
-20
-15
-1
0
-5
0
V
DS
- Vol
ts
Capacitanc
e - PicoFarads
f
= 1 MH
z
C
iss
C
rss
C
oss
Fig. 12
. Forward-
Bias S
af
e O
perat
ing Ar
ea
1
10
100
1,000
10
100
1000
V
DS
- Vol
ts
I
D
- A
m
pe
res
T
J
= 150ºC
T
C
= 25ºC
Single Pu
lse
100µs
R
DS
(on)
Lim
it
-
-
--
100ms
-
-
1ms
10ms
-
DC
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_48P20P(B7) 5-13-08
Fi
g
. 13.
M
axi
m
u
m
T
r
ansi
ent T
h
erm
al I
m
p
ed
ance
0.001
0.010
0.100
1.000
0.
00001
0.00
01
0.
001
0.0
1
0.
1
1
10
Puls
e
W
idt
h -
S
e
c
o
nds
Z
(th)JC
- º
C
/
W
IXTH48P20P
IXTT48P20P
P1-P3
P4-P5
IXTH48P20P
Mfr. #:
Buy IXTH48P20P
Manufacturer:
Littelfuse
Description:
MOSFET -48.0 Amps -200V 0.085 Rds
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
TNT
EMS
Payment:
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IXTH48P20P
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