IXFH160N15T

© 2008 IXYS CORPORATION, All rights reserved DS99965(01/08)
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C 150 V
V
DGR
T
J
= 25°C to 175°C, R
GS
= 1MΩ 150 V
V
GSM
Transient ± 30 V
I
D25
T
C
= 25°C 160 A
I
LRMS
Lead Current Limit, RMS 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
430 A
I
A
T
C
= 25°C 5 A
E
AS
T
C
= 25°C 1 J
dV/dt I
S
I
DM
, V
DD
V
DSS
,T
J
175°C 10 V/ns
P
d
T
C
= 25°C 830 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
1.6 mm (0.062 in.) from case for 10s 300 °C
T
SOLD
Plastic body for 10 seconds 260 °C
M
d
Mounting torque 1.13 / 10 Nm/lb.in.
Weight 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 150 V
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA 2.5 5.0 V
I
GSS
V
GS
= ± 20V, V
DS
= 0V ± 200 nA
I
DSS
V
DS
= V
DSS
5 μA
V
GS
= 0V T
J
= 150°C 250 μA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 I
D25
, Note 1 8.0 9.6 mΩ
Power MOSFET TrenchHV
TM
HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
IXFH160N15T V
DSS
= 150V
I
D25
= 160A
R
DS(on)
9.6m
ΩΩ
ΩΩ
Ω
TO-247 (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
175 °C Operating Temperature
Advantages
z
Easy to mount
z
Space savings
z
High power density
Preliminary Technical Information
G
D
S
(TAB)
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
z
Uninterruptible power supplies
z
High speed power switching
applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH160N15T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 65 105 S
C
iss
8800 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1 MHz 1170 pF
C
rss
150 pF
t
d(on)
21 ns
t
r
21 ns
t
d(off)
52 ns
t
f
29 ns
Q
g(on)
160 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 V
DSS
, I
D
= 25A 43 nC
Q
gd
46 nC
R
thJC
0.18 °C/W
R
thCS
0.25 °C/W
Notes: 1. Pulse test, t 300μs; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-247AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2Ω (External)
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 160 A
I
SM
Repetitive, pulse width limited by T
JM
430 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.2 V
t
rr
90 160 μs
Q
RM
12
A
I
RM
0.55
μC
I
F
= 80A, -di/dt = 200A/μs
V
R
= 75V, V
GS
= 0V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
© 2008 IXYS CORPORATION, All rights reserved
IXFH160N15T
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
350
012345678910
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 80A Value
vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 160A
I
D
= 80A
Fig. 5. R
DS(on)
Normalized to I
D
= 80A Value
vs. Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 40 80 120 160 200 240 280 320
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit

IXFH160N15T

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 150V 160A TO-247
Lifecycle:
New from this manufacturer.
Delivery:
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