VS-12TQ040SPBF

Characteristics STTH1002C-Y
4/9 Doc ID 17536 Rev 2
Figure 1. Peak current versus duty cycle
(per diode)
Figure 2. Forward voltage drop versus
forward current
(typical values, per diode)
I (A)
M
0
10
20
30
40
50
60
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
δ
=tp/T
tp
I
M
P = 10W
P = 5W
P = 2W
δ
0
10
20
30
40
50
60
70
80
90
100
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
V (V)
FM
I (A)
FM
T =25°C
j
T =150°C
j
Figure 3. Forward voltage drop versus
forward current
(maximum values, per diode)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
I (A)
FM
0
10
20
30
40
50
60
70
80
90
100
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
T =150°C
j
T =25°C
j
V (V)
FM
Z/R
th(j-c) th(j-c)
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
t (s)
p
Figure 5. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
10
100
0 50 100 150 200
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
Q (nC)
rr
0
20
40
60
80
100
120
140
160
180
200
220
240
10 100 1000
dI /dt(A/µs)
F
I =5A
F
V =160V
R
T =25°C
j
T =125°C
j
STTH1002C-Y Characteristics
Doc ID 17536 Rev 2 5/9
Figure 11. Thermal resistance junction to ambient versus copper surface under tab (Epoxy
printed circuit board FR4, copper thickness = 35 µm) for DPAK
Figure 7. Reverse recovery time versus dI
F
/dt
(typical values, per diode)
Figure 8. Peak reverse recovery current
versus dI
F
/dt
(typical values, per diode)
t (ns)
rr
0
10
20
30
40
50
60
70
80
10 100 1000
dI /dt(A/µs)
F
I =5A
F
V =160V
R
T =25°C
j
T =125°C
j
I (A)
RM
0
1
2
3
4
5
6
7
8
9
10
11
12
13
10 100 1000
dI /dt(A/µs)
F
I =5A
F
V =160V
R
T =25°C
j
T =125°C
j
Figure 9. Dynamic parameters versus
junction temperature
Figure 10. Thermal resistance junction to
ambient versus copper surface
under tab for D
2
PAK
I
RM
Q
rr
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
T (°C)
j
Q;
rr
I [T ]/Q ;I [T =125°C]
RM j rr RM j
I =5A
F
V =160V
R
0
10
20
30
40
50
60
70
80
02468101214161820
S(Cu)(cm²)
R (°C/W)
th(j-a)
Epoxy printed circuit board FR4, copper thickness = 35 µm
0
10
20
30
40
50
60
70
80
90
100
0 2 4 6 8 10 12 14 16 18 20
R (°C/W)
th(j-a)
S(Cu)(cm²)
Package mechanical data STTH1002C-Y
6/9 Doc ID 17536 Rev 2
2 Package mechanical data
Epoxy meets UL94, V0
Cooling method: by conduction (method C)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Figure 12. Footprint (dimensions in mm)
Table 6. DPAK dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039
V2
H
L4
G
B
L2
E
B2
D
A1
R
R
C
A
C2
0.60 MIN.
V2
A2
6.7
6.7 3 3
1.6
1.6
2.3
2.3

VS-12TQ040SPBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-12TQ040S-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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