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STFI15N60M2-EP
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
Electrical characteri
stics
STF15N60M
2-EP, STFI15N60M
2-
EP
4/
15
DocID027373 Re
v 1
2
Electrical chara
cteristi
cs
T
C
=
25
°C unless other
wise specified
Table 5: On/off states
Symbol
Parameter
Test conditions
Min.
T
y
p.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= 1
mA
600
V
I
DSS
Zero gate voltage drain
current
V
GS
= 0 V, V
DS
= 600 V
1
µA
V
GS
= 0 V, V
DS
= 600 V
T
C
=
125
°C
100
µA
I
GSS
Gate-body leakage current
V
DS
= 0 V, V
GS
= ±25 V
±10
µA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
4
V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 5.5 A
0.340
0.378
Ω
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
T
y
p.
Max.
Unit
C
iss
Input capacitance
V
DS
= 100 V,f = 1 MHz,
V
GS
= 0 V
-
590
-
pF
C
oss
Output capacitance
-
30
-
pF
C
rss
Reverse transfer
capacitance
-
1.1
-
pF
C
oss
eq.
(1)
Equivalent output
capacitance
V
DS
= 0 to 480 V,
V
GS
= 0 V
-
148
-
pF
R
G
Intrinsic gate resistance
f = 1 MHz, I
D
= 0 A
-
7
-
Ω
Q
g
Total gate charge
V
DD
=
480
V, I
D
=
11
A,
V
GS
=
10
V (see
Figure
15: "Gate charge test
circuit"
)
-
17
-
nC
Q
gs
Gate-source charge
-
3.1
-
nC
Q
gd
Gate-drain charge
-
7.3
-
nC
Notes:
(1)
C
oss eq.
is defined a
s a constant
equivalen
t capacitance giving
the sa
me charging ti
me as C
oss
when V
DS
increases fro
m 0 to 80% V
DSS.
Table 7: Switching energy
Symbol
Parameter
Test conditions
Min.
T
y
p.
Max.
Unit
E
(off)
Turn-off energy
(from 90% V
GS
to
0%
I
D
)
V
DD
=
400
V, I
D
= 1.5
A
R
G
= 4.7
Ω, V
GS
=
10
V
-
4.7
-
µJ
V
DD
=
400
V, I
D
= 3.5
A
R
G
= 4.7
Ω, V
GS
=
10
V
-
5.2
-
µJ
STF15N60M
2-EP, STFI15N60M
2-
EP
Electrical characteri
stics
DocID027373 Re
v 1
5/
15
Table 8: Switching times
Symbol
Parameter
Test conditions
Min.
T
y
p.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
=
300
V, I
D
= 5.5
A
R
G
= 4.7
Ω, V
GS
=
10
V (see
Figure 14: "Switching times
test circuit for resistive load"
and
Figure 19: "Switching
time waveform"
)
-
11
-
ns
t
r
Rise time
-
10
-
ns
t
d(off)
Turn-off-delay time
-
40
-
ns
t
f
Fall time
-
15
-
ns
Table 9: Source drain diode
Symbol
Parameter
Test conditions
Min.
T
y
p.
Max.
Unit
I
SD
(1)
Source-drain current
-
11
A
I
SDM
(2)
Source-drain current (pulsed)
-
44
A
V
SD
(3)
Forward on voltage
V
GS
= 0 V, I =
11
A
-
1.6
V
t
rr
Reverse recovery time
I
SD
=
11
A, di/dt = 100 A/µs,
V
DD
=
60
V (see
Figure 16: "
Test circuit for inductive load
switching and diode
recovery times"
)
-
280
ns
Q
rr
Reverse recovery charge
-
2.7
µC
I
RRM
Reverse recovery current
-
19.5
A
t
rr
Reverse recovery time
I
SD
=
11
A, di/dt = 100 A/µs,
V
DD
=
60
V, T
j
=
150
°C
(see
Figure 16: " Test circuit
for inductive load switching
and diode recovery times"
)
-
400
ns
Q
rr
Reverse recovery charge
-
3.8
µC
I
RRM
Reverse recovery current
-
19
A
Notes:
(1)
Limited by max
imum jun
ction temperature
.
(2)
Pulse w
idth is limited by
safe ope
rating area.
(3)
Pulsed: pul
se duration = 300
µs, duty cycle
1.5%.
Electrical characteri
stics
STF15N60M
2-EP, STFI15N60M
2-
EP
6/
15
DocID027373 Re
v 1
2.1
Electrical charac
teristics
(curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Normalized gate threshold voltage
vs temperature
Figure 7: Normalized V
(BR)DSS
vs temperature
GIPG200120151046M
T
I
D
1
0.1
0.1
1
V
DS
(V)
10
(A)
Operat
ion in this ar
ea is
Limited by m
ax R
DS(on)
10µs
1ms
100
µs
0.01
Tj=150°C
T
c=25°C
Sin
gle pul
se
10ms
100
10
K
10
-4
T
p
(s)
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
GC20940
GIPG
12122014141
6M
T
I
D
15
5
0
0
4
V
DS
(V)
8
(A)
12
6V
V
GS
=7, 8, 9, 10V
10
20
16
4V
5V
GIPG12122014141
9M
T
I
D
20
10
0
0
4
V
GS
(V)
8
(A)
2
6
5
15
V
DS
=17
V
0.9
0.8
0.7
0.6
-75
-25
T
J
(°C)
1.0
25
75
125
I
D
= 250 µA
1.1
V
GS(th
)
(norm
)
GIPG181
120141615ALS
GIPG191
120141457A
LS
-75
T
J
(°C)
-25
75
25
125
0.88
0.92
0.96
1.04
1.00
1.08
I
D
= 1mA
V
(BR
)DSS
(norm)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
STFI15N60M2-EP
Mfr. #:
Buy STFI15N60M2-EP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V 11A I2PAKFP
Lifecycle:
New from this manufacturer.
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STFI15N60M2-EP