PMEG6010EP_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 17 March 2010 7 of 14
NXP Semiconductors
PMEG6010EP
1 A low V
F
MEGA Schottky barrier rectifier
T
j
= 150 °C
(1) δ =0.1
(2) δ =0.2
(3) δ =0.5
(4) δ =1
T
j
= 125 °C
(1) δ =1
(2) δ =0.9
(3) δ =0.8
(4) δ =0.5
Fig 7. Average forward power dissipation as a
function of average forward current; typical
values
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ =1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
FR4 PCB, mounting pad for cathode 1 cm
2
T
j
= 150 °C
(1) δ =1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
ambient temperature; typical values
I
F(AV)
(A)
0.0 1.51.00.5
0.7
P
F(AV)
(W)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
(1)
(2)
(3)
(4)
V
R
(V)
0604020
0.4
0.2
0.6
0.8
P
R(AV)
(W)
0.0
(1)
(2)
(3)
(4)
T
amb
(°C)
17512525 15010050075
006aab899
0.8
0.4
1.2
1.6
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
T
amb
(°C)
17512525 15010050075
006aab900
0.8
0.4
1.2
1.6
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
