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IRL630STRR

P1-P3P4-P6P7-P9
www.vishay.com Document Number: 90390
4 S11-1044-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL630S, SiHL630S
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
0
500
1000
1500
2000
110100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V=0V, f=1MHz
C =C+C,CSHORTED
C=C
C=C+C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
010203040
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE 13
V , Gate-to-Source Voltage (V)
GS
I = 9.0A
V = 160V
V = 100V
V=40V
D
DS
DS
DS
A
0.1
1
10
100
00.40.81.21.6
T=25°C
T = 150°C
J
J
V=0V
GS
V , Source-to-Drain Voltage (V)
I
,
R
e
v
e
rs
e
Dr
a
i
n
Cu
r
rent
(
A
)
SD
S
D
0.1
1
10
100
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
I
,Drai
n
C
u
rr
ent
(A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T=25°C
T=150°C
Single Pulse
C
J
10μs
100μs
1ms
10ms
100ms
Document Number: 90390 www.vishay.com
S11-1044-Rev. C, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL630S, SiHL630S
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
2
4
6
8
10
25 50 75 100 125 150
C
I
, Drain Current (Amps)
D
T , Case Temperature (°C)
A
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
5 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
t
h
JC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Thermal
R
esponse
(
Z)
A
A
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
www.vishay.com Document Number: 90390
6 S11-1044-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL630S, SiHL630S
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
R
g
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
5 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
0
100
200
300
400
500
600
25 50 75 100 125 150
V=50V
Starting T , Juntion Temperature (°C)
J
E , Single Pulse Avalanche Energy (mJ)
AS
DD
I
TOP 9.0A
5.7A
BOTTOM 4.0A
D
A
Q
GS
Q
GD
Q
G
V
G
Charge
5 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P1-P3P4-P6P7-P9

IRL630STRR

Mfr. #:
Buy IRL630STRR
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 844-IRL630STRRPBF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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