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NTGS3446T1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
1 Publication Order Number:
NTGS3446/D
NTGS3446
Power MOSFET
20 V, 5.1 A Single
N−Channel, TSOP6
Features
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• I
DSS
Specified at Elevated Temperature
• Pb−Free Package is Available
Applications
• Power Management in portable and battery−powered products, i.e.
computers, printers, PCMCIA cards, cellular and cordless
• Lithium Ion Battery Applications
• Notebook PC
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±12 V
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
t 10 ms)
R
q
JA
P
d
I
D
I
DM
244
0.5
2.5
10
°C/W
W
A
A
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
t 10 ms)
R
q
JA
P
d
I
D
I
DM
128
1.0
3.6
14
°C/W
W
A
A
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
t 10 ms)
R
q
JA
P
d
I
D
I
DM
62.5
2.0
5.1
20
°C/W
W
A
A
Source Current (Body Diode) I
S
5.1 A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
150
°C
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10PCB, operating to steady state.
2. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick
single−sided), operating to steady state.
3. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick
single−sided), t < 5.0 seconds.
1256
3
N−Channel
TSOP−6
CASE 318G
STYLE 1
MARKING
DIAGRAM
446 = Device Code
W = Work Week
PIN ASSIGNMENT
3
Gate
1
Drain
Source
4
2
Drain
Drain
5
Drain
6
4
Drain
Gate
Source
Device Package Shipping
†
ORDERING INFORMATION
NTGS3446T1 TSOP−6 3000/Tape & Reel
NTGS3446T1G
TSOP−6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
20 V
36 mW @ 4.5 V
R
DS(on)
TYP
5.1 A
I
D
MAXV
(BR)DSS
446
W
1
1
http://onsemi.com
NTGS3446
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
20
−
−
22
−
−
Vdc
mV/°C
Zero Gate Voltage Collector Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 85°C)
I
DSS
−
−
−
−
1.0
25
mAdc
Gate−Body Leakage Current (V
GS
= ± 12 Vdc, V
DS
= 0) I
GSS(f)
I
GSS(r)
−
−
−
−
100
−100
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
D
= 0.25 mA, V
DS
= V
GS
Temperature Coefficient (Negative)
V
GS(th)
0.6
−
0.85
−2.5
1.2
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance
(V
GS
= 4.5 Vdc, I
D
= 5.1 Adc)
(V
GS
= 2.5 Vdc, I
D
= 4.4 Adc)
R
DS(on)
−
−
36
44
45
55
mW
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 5.1 Adc) g
FS
− 12 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 510 750
pF
Output Capacitance C
oss
− 200 350
Transfer Capacitance C
rss
− 60 100
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(V
DD
= 10 Vdc, I
D
= 1.0 Adc,
V
GS
= 4.5 Vdc, R
G
= 6.0 W)
t
d(on)
− 9.0 16
ns
Rise Time t
r
− 12 20
Turn−Off Delay Time t
d(off)
− 35 60
Fall Time t
f
− 20 35
Gate Charge
(V
DS
= 10 Vdc, I
D
= 5.1 Adc,
V
GS
= 4.5 Vdc)
Q
T
− 8.0 15
nC
Q
gs
− 2.0 −
Q
gd
− 2.0 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 4)
(I
S
= 1.7 Adc, V
GS
= 0 Vdc)
(I
S
= 1.7 Adc, V
GS
= 0 Vdc, T
J
= 85°C)
V
SD
−
−
0.74
0.66
1.1
−
Vdc
Reverse Recovery Time
(I
S
= 1.7 Adc, V
GS
= 0 Vdc,
di
S
/dt = 100 A/ms)
t
rr
− 20 −
ns
t
a
− 11 −
t
b
− 9.0 −
Reverse Recovery Stored
Charge
Q
RR
− 0.01 −
mC
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
NTGS3446
http://onsemi.com
3
0
2
4
6
8
10
12
14
012345678910
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
= 1.4 V
V
GS
= 1.6 V
V
GS
= 2 V
V
GS
= 1.8 V
V
GS
= 2.2 V
V
GS
= 5 V
V
GS
= 2.6 V
V
GS
= 10 V
T
J
= 25°C
Figure 1. On−Region Characteristics
0
2
4
6
8
10
12
14
012345
I
D
, DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
DS
w 10 V
0.01
0.035
0.06
0.085
123456
0.11
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
I
D
= 3.3 A
T
J
= 25°C
0.01
0.02
0.03
0.04
0.05
0.06
2345678910
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
I
D
, DRAIN CURRENT (A)
V
GS
= 2.5 V
V
GS
= 5.5 V
T
J
= 25°C
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
−50 −25 0 25 50 75 100 125 150
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 3.25 A
V
GS
= 4.5 V
10
100
1000
2 4 6 8 10 12 14 16 18 20
Figure 5. On−Resistance Variation with
Temperature
I
DSS
, LEAKAGE (nA)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
P1-P3P4-P5

NTGS3446T1G

Mfr. #:
Buy NTGS3446T1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 5.1A N-Channel
Lifecycle:
New from this manufacturer.
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