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STPS30H60CKY-TR

P1-P3P4-P6P7-P7
December 2010 Doc ID 18295 Rev 1 1/7
7
STPS30H60C-Y
Automotive power Schottky rectifier
Features
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ AEC-Q101 qualified
Description
30 A dual center tab Schottky rectifier suitable for
automotive applications.
Package in PowerSO-20 (slug up), this device is
especially intented for use in a low voltage
applications.
Table 1. Device summary
Symbol Value
I
F(AV)
2 x 15 A
V
RRM
60 V
T
j(max)
150 °C
V
F(max)
0.645 V
A1
A2
K
K
A2
A1
K
Pin 1
Pin 10
Pin 11
Pin 20
K
K
PowerSO-20 (slug up)
STPS30H60CKY-TR
www.st.com
Characteristics STPS30H60C-Y
2/7 Doc ID 18295 Rev 1
1 Characteristics
When diodes 1 and 2 are used simultaneously:
ΔT
j(diode 1)
= P
(diode1)
x R
th(j-c)(Per diode)
+ P
(diode 2)
x R
th(c)
Table 2. Absolute rating (limiting value, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
IF
(RMS)
(1)
1. All anode pins (A1, A2) must be connected
Forward rms current 45 A
IF
(AV)
(1)
Average forward current
T
c
= 140 °C, δ = 0.5
square pulse
Per diode 15
A
T
c
= 135 °C, δ = 0.5
square pulse
Per device 30
I
FSM
(1)
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 250 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Operating junction temperature range -40 to +150 °C
T
R
Recommended reflow soldering temperature range 245 +0/-5 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Per device
0.95
0.61
°C/W
R
th(c)
Coupling 0.27 °C/W
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test : tp = 380 µs, d < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
150 µA
T
j
= 125 °C 45 mA
V
F
(1)
(2)
2. All anode pins (A1, A2) must be connected
To evaluate the maximum conduction losses use the following equation:
P = 0.385 x I
F(AV)
+ 0.00867 x I
F
2
(RMS)
Forward voltage drop
T
j
= 25 °C I
F
= 15 A 0.580
V
T
j
= 125 °C I
F
= 15 A 0.515
T
j
= 25 °C I
F
= 30 A 0.700
T
j
= 125 °C I
F
= 30 A 0.645
STPS30H60C-Y Characteristics
Doc ID 18295 Rev 1 3/7
Figure 1. Average forward power dissipation
versus average forward current (per
diode, all anode pins connected)
Figure 2. Average forward current versus
ambient temperature (per diode, all
anode pins connected) (δ = 0.5)
0
2
4
6
8
10
12
0 2 4 6 8 101214161820
P (W)
F(AV)
T
δ = t / T
p
t
p
I (A)
F(AV)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
0
2
4
6
8
10
12
14
16
18
0 25 50 75 100 125 150
I (A)
F(AV)
R
th(j-a)
= R
th(j-c)
R
th(j-a)
= 10 °C/W
T (°C)
amb
T
δ = t / T
p
t
p
Figure 3. Non repetitive surge peak forward
current versus overload duration
(maximum values)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
0
50
100
150
200
250
300
1.E-03 1.E-02 1.E-01 1.E+00
I
M
t
δ = 0.5
t(s)
T = 25 °C
c
T = 75 °C
c
T = 125 °C
c
I (A)
M
(per diode, all anode pins connected)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
(per diode, all anode pins connected)
Figure 5. Reverse leakage current versus
reverse voltage applied (per diode)
(typical values)
Figure 6. Junction capacitance versus
reverse voltage applied (per diode)
(typical values)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 5 10 15 20 25 30 35 40 45 50 55 60
V (V)
R
I (mA)
R
T = 25 °C
j
T = 50 °C
j
T = 75 °C
j
T = 125 °C
j
T = 150 °C
j
T = 100 °C
j
0.1
1.0
10.0
1 10 100
V (V)
R
C(nF)
F=1MHz
V=30mV
T=25°C
osc RMS
j
P1-P3P4-P6P7-P7

STPS30H60CKY-TR

Mfr. #:
Buy STPS30H60CKY-TR
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Automotive High PWR 30A Dual Center Tab
Lifecycle:
New from this manufacturer.
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