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SI1967DH-T1-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 68784
S10-0721-Rev. B, 29-Mar-10
Vishay Siliconix
Si1967DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.1
10
T
J
= 150 °C
T
J
= 25 °C
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.4
0.8
1.2
1.6
2.0
012345
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
=25 °C
T
J
= 125 °C
I
D
= - 0.91 A
0
1
5
)W( rewoP
Time (s)
3
4
1 600 10 0.1 0.01
2
100
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)I
D
10
0.1
0.1 1 10
1
T
A
= 25 °C
Single Pulse
1ms
10 ms
100 ms
0.01
1s,10s
DC
BVDSS Limited
100
Limited byR
DS(on)
*
Document Number: 68784
S10-0721-Rev. B, 29-Mar-10
www.vishay.com
5
Vishay Siliconix
Si1967DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
0.4
0.8
1.2
1.6
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power, Junction-to-Foot
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
T
C
- Case Temperature (°C)
wer Dissipation (W)
o
P
www.vishay.com
6
Document Number: 68784
S10-0721-Rev. B, 29-Mar-10
Vishay Siliconix
Si1967DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68784
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t
n e
i
s n a
r T
e
v i t
c e f
f
E
d e
z i
l a m
r o
N
e
c
n a
d
e p m I
l a m
r
e
h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 220 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e f f E d e z i l a m r o N
e c n a d e p m I l a m r e h T
0.02
P1-P3P4-P6P7-P7

SI1967DH-T1-E3

Mfr. #:
Buy SI1967DH-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 8V Vgs SC70-6
Lifecycle:
New from this manufacturer.
Delivery:
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