IRF3710STRLPBF Datasheet IRF3710STRLPBF, IRF3710LPBF, IRF3710STRRPBF | P7-P9

IRF3710S/LPbF

Peak Diode Recovery dv/dt Test Circuit

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D =

P. W .

Period







• dv/dt controlled by R

• I

controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity of D.U.T for P-Channel

[ ]

*** V

= 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For N-channel HEXFET

power MOSFETs

IRF3710S/LPbF

Pak (TO-263AB) Part Marking Information

Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF3710S/LPbF

TO-262 Part Marking Information

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

P1-P3 P4-P6 P7-P9 P10-P10

IRF3710STRLPBF

Mfr. #:

Buy IRF3710STRLPBF

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFT 100V 57A 23mOhm 86.7nC

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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IRF3710STRLPBF

IRF3710STRLPBF

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