74LVC1G58
CONFIGURABLE MULTIPLE-FUNCTION GATE
74LVC1G58
Document number DS35126 Rev. 4 - 2
7 of 15
www.diodes.com
June 2012
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics (All typical values are at V
CC
= 3.3V, T
A
= +25°C)
Symbol Parameter Test Conditions
V
CC
Min Typ Max Unit
C
I
Input Capacitance
V
I
= V
CC
– or GND
3.3 3.5 pF
θ
JA
Thermal Resistance Junction-
to-Ambient
SOT26
(Note 6)
204
o
C/W
SOT363 371
X2-DFN1410-6
430
X2-DFN1010-6
510
θ
JC
Thermal Resistance Junction-
to-Case
SOT26
(Note 6)
52
o
C/W
SOT363 143
X2-DFN1410-6
190
X2-DFN1010-6
250
Notes: 6. Test condition for SOT26, SOT363, X2-DFN1410-6 and X2-DFN1010-6: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
Switching Characteristics
T
A
= -40°C to +85°C, CL = 30 or 50pF as noted (see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
V
CC
= 1.8V
± 0.15V
V
CC
= 2.5V
± 0.2V
V
CC
= 3.3V
± 0.3V
V
CC
= 5V
± 0.5V
Unit
Min Max Min Max Min Max Min Max
t
pd
Any Y 1.0 14.4 0.7 8.3 0.7 6.3 0.7 5.1 ns
T
A
= -40°C to +125°C, CL = 30 or 50pF as noted (see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
V
CC
= 1.8V
± 0.15V
V
CC
= 2.5V
± 0.2V
V
CC
= 3.3V
± 0.3V
V
CC
= 5V
± 0.5V
Unit
Min Max Min Max Min Max Min Max
t
pd
Any Y 1.0 18.0 0.7 10.4 0.7 7.9 0.7 6.4 ns
Operating Characteristics
T
A
= +25°C
Parameter
Test
Conditions
V
CC
= 1.8V V
CC
= 2.5V V
CC
= 3.3V V
CC
= 5V
Unit
Typ. Typ. Typ. Typ.
C
pd
Power dissipation
capacitance
f = 10 MHz 22 22 23 24 pF
