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IRF6215PBF
P1-P3
P4-P6
P7-P9
IRF6215PbF
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
R
G
V
DD
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor "D"
•
D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14.
For P-Channel HEXFETS
IRF6215PbF
LEAD ASS
I
GNMENTS
1
-
GA
TE
2
-
DR
A
IN
3
-
S
OU
RC
E
4
-
DR
A
IN
- B
-
1.3
2 (.0
52)
1.2
2 (.0
48)
3X
0.5
5 (.
022)
0.4
6 (.
018)
2.92
(.
115
)
2.64
(.
104
)
4.69
(.1
85)
4.20
(.1
65)
3X
0.93
(.
037
)
0.69
(.
027
)
4.06
(
.160
)
3.55
(
.140
)
1.15
(.0
45)
MIN
6.
47 (.25
5)
6.
10 (.24
0)
3.78
(.1
49)
3.54
(.1
39)
- A -
10.
54 (.
415)
10.
29 (.
405)
2.87
(.
113
)
2.62
(.
103
)
15.
24 (.
600)
14.
84 (.
584)
14.
09 (.
555
)
13.
47 (.
530
)
3X
1.4
0 (.0
55)
1.1
5 (.0
45)
2.54
(.1
00)
2X
0.36
(.0
14)
M
B A
M
4
1
2
3
NOTES:
1
DI
MEN
SIO
NING
& TOL
E
RAN
C
ING PE
R
A
NS
I Y14
.5
M, 19
82.
3 OU
TLIN
E C
ONF
O
RMS
T
O JE
DE
C OU
TL
INE
TO
-2
20A
B
.
2
CO
NTR
OL
LIN
G D
IMEN
SION
: INC
H
4 HEA
TS
INK
& LE
A
D ME
AS
UR
EME
NT
S D
O
N
O
T I
NCLUDE BURRS.
HE
XF
ET
1- GATE
2- DRAI
N
3-
S
OURCE
4- DRAI
N
LEAD
ASSI
GNMENTS
IG
BTs, C
oPACK
1- GATE
2- COLLE
CTOR
3- EM
ITTE
R
4- COLLE
CTOR
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EX
AMPLE
:
IN TH
E ASSEM
B
LY
LINE "C"
T
HIS I
S AN IRF
1010
LOT COD
E
1789
ASSEM
B
LED
O
N
WW 19
,
1997
PART NU
M
BER
ASS
EMBLY
LOT CO
DE
DA
T
E
CO
DE
Y
EA
R 7 = 1997
LI
N
E
C
WEEK
19
LOGO
RE
C
TIF
IER
IN
TE
RN
AT
IO
N
AL
Note
:
"P" in assembly l
i
ne
position indi
cates "Lead-Free"
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
11/03
Note: For the most current drawings
please refer to the IR website at:
http://www.irf.com/package/
P1-P3
P4-P6
P7-P9
IRF6215PBF
Mfr. #:
Buy IRF6215PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT PCh -150V -13A 290mOhm 44nC
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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