SI7392DP-T1-E3 Datasheet SI7392DP-T1-E3, SI7392DP-T1-GE3 | P1-P3

Vishay Siliconix

Si7392DP

Document Number: 72165

S11-0212-Rev. G, 14-Feb-11

www.vishay.com

1

N-Channel Reduced Q

g

, Fast Switching MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Extremely Low Q

gd

for Low Switching Losses

• TrenchFET

®

Power MOSFET

• New Low Thermal Resistance PowerPAK

®

Package with Low 1.07 mm Profile

• 100 % R

g

Tested

• 100 % UIS Tested

• Complaint to RoHS Directive 2002/95/EC

APPLICATIONS

• High-Side DC/DC Conversion

- Notebook

- Server

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

30

0.00975 at V

GS

= 10 V

15

0.01375 at V

GS

= 4.5 V

13

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

Ordering Information:

Si7392DP-T1-E3 (Lead (Pb)-free)

Si7392DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. See solder profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

15 9

A

T

A

= 70 °C

12 7

Pulsed Drain Current

I

DM

± 50

Continuous Source Current (Diode Conduction)

a

I

S

4.1 1.5

Avalanche Current

L = 0.1 mH

I

AS

30

Single-Pulse Avalanche Energy

E

AS

45 mJ

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

51.8

W

T

A

= 70 °C

3.2 1.1

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b, c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (MOSFET)

a

t ≤ 10 s

R

thJA

20 25

°C/W

Steady State 53 70

Maximum Junction-to-Case (Drain) Steady State

R

thJC

3.5 4.5

www.vishay.com

2

Document Number: 72165

S11-0212-Rev. G, 14-Feb-11

Vishay Siliconix

Si7392DP

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

MOSFET SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

1.0 3.0 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 30 V, V

GS

= 0 V

1

µA

V

DS

= 30 V, V

GS

= 0 V, T

J

= 70 °C

5

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V

40 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 15 A

0.008 0.00975

Ω

V

GS

= 4.5 V, I

D

= 13 A

0.011 0.01375

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 15 A

40 S

Diode Forward Voltage

a

V

SD

I

S

= 4.1 A, V

GS

= 0 V

0.75 1.1 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 15 A

10 15

nCGate-Source Charge

Q

gs

3.5

Gate-Drain Charge

Q

gd

2.6

Gate Resistance

R

g

1.6 2.7 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 15 V, R

L

= 15 Ω

I

D

≅ 1 A, V

GEN

= 10 V, R

g

= 6 Ω

15 25

ns

Rise Time

t

r

715

Turn-Off Delay Time

t

d(off)

46 70

Fall Time

t

f

917

Source-Drain Reverse Recovery Time

t

rr

I

F

= 2.7 A, dI/dt = 100 A/µs

30 60

Output Characteristics

0

10

20

30

40

50

012345

V

GS

= 10 V thru 4 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

3 V

Transfer Characteristics

0

10

20

30

40

50

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

T

C

= 125 °C

- 55 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

Document Number: 72165

S11-0212-Rev. G, 14-Feb-11

www.vishay.com

3

Vishay Siliconix

Si7392DP

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

- On-Resistance (Ω)R

DS(on)

0.000

0.006

0.012

0.018

0.024

0.030

0 1020304050

I

D

- Drain Current (A)

V

GS

= 10 V

V

GS

= 4.5 V

0

1

2

3

4

5

6

03691215

V

DS

= 15 V

I

D

= 15 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2

T

J

= 25 °C

50

10

0.1

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

1

T

J

= 150 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

300

600

900

1200

1500

1800

0 6 12 18 24 30

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V

I

D

= 15 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

0.000

0.008

0.016

0.024

0.032

0.040

0246810

I

D

= 15 A

- On-Resistance (Ω)

R

DS(on)

V

GS

- Gate-to-Source Voltage (V)

SI7392DP-T1-E3

SI7392DP-T1-E3

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