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STPS3L60S

P1-P3P4-P5
1/5
STPS3L60S
July 2003 - Ed: 2A
POWER SCHOTTKY RECTIFIER
®
Schottky rectifier suited for Switched Mode Power
Supplies and high frequency DC to DC converters.
Packaged in SMC, this device is intended for use
in DC/DC chargers.
DESCRIPTION
■
NEGLIGIBLE SWITCHING LOSSES
■
LOW THERMAL RESISTANCE
■
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
60 V
I
F(RMS)
RMS forward current
10 A
I
F(AV)
Average forward current Tc = 100°C δ = 0.5
3A
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
75 A
I
RRM
Repetitive peak reverse current tp=2µssquare F=1kHz
1A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25°C
1600 W
T
stg
Storage temperature range
-65 to+175 °C
Tj
Maximum operating junction temperature *
150 °C
dV/dt
Critical rate of rise of reverse voltage
10000 V/µs
ABSOLUTE RATINGS (limiting values)
I
F(AV)
3A
V
RRM
60 V
Tj (max) 150°C
V
F
(max) 0.65 V
MAIN PRODUCT CHARACTERISTICS
SMC
(JEDEC DO-214AB)
*:
dPtot
dTj Rth j a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
STPS3L60S
2/5
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage current Tj = 25°CV
R
=V
RRM
55 µA
Tj = 125°C
10 15 mA
V
F
*
Forward voltage drop Tj = 25°CI
F
=3A
0.7 V
Tj = 125°CI
F
=3A
0.56 0.65
Tj=25°CI
F
=6A
0.94
Tj = 125°CI
F
=6A
0.67 0.76
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.54xI
F(AV)
+ 0.037 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads
20 °C/W
THERMAL RESISTANCES
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.0
0.5
1.0
1.5
2.0
2.5
PF(av)(W)
T
δ
=tp/T
tp
IF(av) (A)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
Fig. 1: Average forward power dissipation versus
average forward current.
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
T
δ
=tp/T
tp
Rth(j-a)=75°C/W
Rth(j-a)=Rth(j-l)
Tamb(°C)
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
STPS3L60S
3/5
0 5 10 15 20 25 30 35 40 45 50 55 60
1E-3
1E-2
1E-1
1E+0
1E+1
5E+1
IR(mA)
VR(V)
Tc=25°C
Tc=75°C
Tc=100°C
Tc=125°C
Tc=150°C
Tc=50°C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1 10 100
10
20
50
100
200
500
C(pF)
F=1MHz
Tj=25°C
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
1E-3 1E-2 1E-1 1E+0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Zth(j-l)/Rth(j-l)
tp(s)
T
δ
=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Fig. 6: Relative variation of thermal impedance
junction to lead versus pulse duration.
1E-3 1E-2 1E-1 1E+0
0
2
4
6
8
10
12
14
IM(A)
t(s)
IM
t
δ=0.5
Tc=25°C
Tc=100°C
Tc=50°C
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P1-P3P4-P5

STPS3L60S

Mfr. #:
Buy STPS3L60S
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 3.0 Amp 60 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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