APT40GP90JDQ2

050-7492 Rev A 2-2006
APT40GP90JDQ2
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 600V
R
G
= 4.3
L = 100µH
SWITCHING ENERGY LOSSES (µJ) E
ON2
, TURN ON ENERGY LOSS (µJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) E
OFF
, TURN OFF ENERGY LOSS (µJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 600V
V
GE
= +15V
R
G
= 4.3
R
G
= 4.3, L = 100µH, V
CE
= 600V
V
CE
= 600V
T
J
= 25°C or 125°C
R
G
= 4.3
L = 100µH
20
15
10
5
0
70
60
50
40
30
20
10
0
6000
5000
4000
3000
2000
1000
0
8000
7000
6000
5000
4000
3000
2000
1000
0
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
V
CE
= 600V
V
GE
= +15V
R
G
= 4.3
T
J
= 125°C
T
J
= 25°C
V
CE
= 600V
V
GE
= +15V
R
G
= 4.3
V
CE
= 600V
V
GE
= +15V
T
J
= 125°C
0 20 40 60 80 100 0 20 40 60 80 100
0 20 40 60 80 100 0 20 40 60 80 100
0 20 40 60 80 100 0 20 40 60 80 100
0 10 20 30 40 50 0 25 50 75 100 125
R
G
= 4.3, L = 100µH, V
CE
= 600V
T
J
= 125°C
T
J
= 25°C
E
off,
80A
E
on2,
80A
E
off,
40A
E
on2,
40A
E
off,
20A
E
on2,
20A
E
off,
80A
E
on2,
80A
E
off,
40A
E
on2,
40A
E
off,
20A
E
on2,
20A
050-7492 Rev A 2-2006
APT40GP90JDQ2
TYPICAL PERFORMANCE CURVES
0.50
0.40
0.30
0.20
0.10
0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.3
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0 10
7,000
1,000
500
100
50
10
180
160
140
120
100
80
60
40
20
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0 10 20 30 40 50 0 200 400 600 800 1000
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 50 60
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125°C
T
C
= 75°C
D = 50 %
V
CE
= 600V
R
G
= 4.3
140
100
50
10
5
1
C
ies
C
oes
C
res
0.5
0.1
0.05
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
θJC
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
D = 0.9
0.0940
0.204
0.142
0.0117
0.136
1.07
Power
(Watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
050-7492 Rev A 2-2006
APT40GP90JDQ2
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
APT30DQ100
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
T
J
= 125°C
Collector Current
CollectorVoltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125°C
CollectorVoltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%

APT40GP90JDQ2

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules FG, IGBT-COMBI, 900V, SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet