PNP Silicon
Power Transistors
Features
• Power amplifier applications
Maximum Ratings
Symbol Rating Rating Unit
V
CEO
Collector-Emitter Voltage -120 V
V
CBO
Collector-Base Voltage -120 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current -800 mA
I
B
Base Current -160 mA
P
C
Collector power dissipation 500
1000(Note 1)
mW
T
J
Junction Temperature 150
к
T
STG
Storage Temperature -55 to +150
к
Note 1: Mounted on ceramic substrate (250mm
2
x 0.8t)
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol Parameter Min Typ. Max Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
(I
C
=-10mAdc, I
B
=0)
-120 --- --- Vdc
V
(BR)EBO
Collector-Emitter Breakdown Voltage*
(I
E
=-1mAdc, I
C
=0)
-5 --- Vdc
I
CBO
Collector-Base Cutoff Current
(V
CB
=-120Vdc,I
E
=0)
--- --- -0.1 uAdc
I
EBO
Emitter-Base Cutoff Current
(V
EB
=-5.0Vdc, I
C
=0)
--- --- -0.1 uAdc
ON CHARACTERISTICS
h
FE
Forward Current Transfer ratio
(I
C
=-0.1Adc, V
CE
=-5.0Vdc) (Note 2)
80 --- 240 ---
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=-0.5Adc, I
B
=-50mAdc)
--- --- -1.0 Vdc
V
BE
Base-Emitter Voltage
(I
C
=-0.5Adc, V
CE
=-5.0Vdc)
--- --- -1.0 Vdc
f
T
Transition Frequency
(I
C
=-0.1Adc, V
CE
=-5.0Vdc)
--- 120 --- MHz
C
ob
Collector Output Capacitance
(V
CB
=-10V, I
E
=0, f=1MHz)
--- --- 30 pF
25
SOT-89
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
MCC
Revision: B 2013/01/01
TM
Micro Commercial Components
CLASSIFICATION OF H
FE (1)
Rank O
Range 80-160
Marking DO
Y
120-240
DY
www.mccsemi.com
1 of 3
1 2 3
1.BASE
2.COLLECTOR
3.EMITTER
B
A
E
D
G
H
F
K
J
C
2SA1201-O
2SA1201-Y
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
•
Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
H
alogen free available upon request by adding suffix "-HF"
•
