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PHPT60610NYX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NXP Semiconductors
PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
PHPT60610NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 27 May 2015 6 / 17
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= 48 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nAI
CBO
collector-base cut-off
current
V
CB
= 48 V; I
E
= 0 A; T
j
= 150 °C - - 50 µA
I
CES
collector-emitter cut-off
current
V
CE
= 48 V; V
BE
= 0 V; T
amb
= 25 °C - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
= 7 V; I
C
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 2 V; I
C
= 500 mA; T
amb
= 25 °C 240 410 -
V
CE
= 2 V; I
C
= 1 A; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
210 400 -
V
CE
= 2 V; I
C
= 5 A; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
100 200 -
h
FE
DC current gain
V
CE
= 2 V; I
C
= 10 A; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C; pulsed
50 100 -
I
C
= 1 A; I
B
= 50 mA; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C; pulsed
- 30 40 mV
I
C
= 5 A; I
B
= 500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 115 160 mV
V
CEsat
collector-emitter
saturation voltage
- 250 360 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 10 A; I
B
= 1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
- 25 36 mΩ
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- - 0.95 V
I
C
= 5 A; I
B
= 500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- - 1.2 V
V
BEsat
base-emitter saturation
voltage
I
C
= 10 A; I
B
= 1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
- - 1.4 V
V
BEon
base-emitter turn-on
voltage
V
CE
= 2 V; I
C
= 500 mA; T
amb
= 25 °C - - 0.8 V
t
d
delay time - 20 - ns
t
r
rise time - 180 - ns
t
on
turn-on time - 200 - ns
t
s
storage time - 340 - ns
t
f
fall time - 165 - ns
t
off
turn-off time
V
CC
= 12.5 V; I
C
= 5 A; I
Bon
= 250 mA;
I
Boff
= -250 mA; T
amb
= 25 °C
- 505 - ns
NXP Semiconductors
PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
PHPT60610NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 27 May 2015 7 / 17
Symbol Parameter Conditions Min Typ Max Unit
f
T
transition frequency V
CE
= 10 V; I
C
= 500 mA; f = 100 MHz;
T
amb
= 25 °C
- 140 - MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 50 - pF
aaa-016633
200
400
600
h
FE
0
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
V
CE
= 2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 542 31
aaa-016634
4
8
12
I
C
(A)
0
I
B
= 120 mA
50 mA
35 mA
15 mA
10 mA
5 mA
95 mA
70 mA
25 mA
20 mA
T
amb
= 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
NXP Semiconductors
PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
PHPT60610NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 27 May 2015 8 / 17
aaa-016635
0.6
0.8
0.4
1.0
1.2
V
BE
(V)
0.2
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(1)
(2)
(3)
V
CE
= 2 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
aaa-016636
0.6
0.8
0.4
1.0
1.2
V
BEsat
(V)
0.2
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
10
-1
10
-2
1
V
CEsat
(V)
10
-3
aaa-016637
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(3)
(1)
(2)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
10
-1
10
-2
1
V
CEsat
(V)
10
-3
aaa-016638
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(1)
(2)
(3)
(4)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 20
(4) I
C
/I
B
= 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

PHPT60610NYX

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Manufacturer:
Nexperia
Description:
IC TRANS NPN 60V 10A LFPAK56
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