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PMEG45A10EPDZ
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
NXP Semiconductors
PMEG45A10EPD
45 V
, 10 A low VF MEGA Schottky barrier rectifier
PMEG45A10EPD
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
16 December 2014
6 / 13
aaa-009168
10
-1
10
-3
10
-2
10
1
10
2
I
F
(A)
10
-4
V
F
(V)
0
0.8
0.6
0.2
0.4
(1)
(2)
(3)
(4)
(5)
(6)
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 100 °C
(4) T
j
= 85 °C
(5) T
j
= 25 °C
(6) T
j
= -40 °C
Fig. 4.
Forward current as a function of forward
voltage; typical values (pulsed condition)
aaa-009169
1
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
I
R
(A)
10
-9
V
R
(V)
0
50
40
20
30
10
(1)
(2)
(3)
(4)
(5)
(6)
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 100 °C
(4) T
j
= 85 °C
(5) T
j
= 25 °C
(6) T
j
= -40 °C
Fig. 5.
Reverse current as a function of reverse
voltage; typical values (pulsed condition)
V
R
(V)
0
45
30
15
aaa-012459
0.5
1.0
1.5
C
d
(nF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 6.
Diode capacitance as a function of reverse voltage; typical values
NXP Semiconductors
PMEG45A10EPD
45 V
, 10 A low VF MEGA Schottky barrier rectifier
PMEG45A10EPD
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
16 December 2014
7 / 13
1
1.
T
est information
time
I
F
I
R
t
rr
I
R(meas)
006aad022
Fig. 7.
Reverse recovery definition; step recovery
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
Fig. 8.
Reverse recovery definition; ramp recovery
001aab912
time
time
V
FRM
V
F
I
F
V
F
Fig. 9.
Forward recovery definition
NXP Semiconductors
PMEG45A10EPD
45 V
, 10 A low VF MEGA Schottky barrier rectifier
PMEG45A10EPD
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
16 December 2014
8 / 13
t
1
t
2
P
t
006aaa812
duty cycle δ
=
t
1
t
2
Fig. 10.
Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
I
F(A
V)
= I
M
× δ with I
M
defined as peak current, I
RMS
= I
F(A
V)
at DC, and I
RMS
= I
M
× √δ with
I
RMS
defined as RMS current.
12.
Package outline
14-10-13
Dimensions in mm
6.6
6.4
0.24
0.16
0.82
0.74
5.9
5.7
4.4
4.2
1.3
1.1
4.2
3.8
4.8
4.4
1.3
0.9
2.15
1.95
3.5
3.1
0.45
0.25
0.45
0.25
2.13
2
1
3
Fig. 1
1.
Package outline CFP15 (SOT1289)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
PMEG45A10EPDZ
Mfr. #:
Buy PMEG45A10EPDZ
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 45V 10A MEGA Schottky
Lifecycle:
New from this manufacturer.
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