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VS-10ETF10-M3

P1-P3P4-P6P7-P8
VS-10ETF1...-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
4
Document Number: 96211
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
1000
10
1
0.5 1.0 1.5 2.0 2.5 4.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
10ETF.. Series
T
J
= 150 °C
T
J
= 25 °C
100
4.03.0 3.5
0.6
0.3
0
0 40 80 120 160 200
t
rr
- Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.1
0.2
0.5
0.4
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 8 A
0.8
0.6
0
0 40 80 120 160 200
t
rr
- Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.2
0.4
10ETF.. Series
T
J
= 150 °C
I
FM
= 8 A
I
FM
= 1 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 2 A
1.6
0
0 40 80 120 160 200
Q
rr
- Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.4
0.8
1.2
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 10 A
I
FM
= 8 A
10ETF.. Series
T
J
= 25 °C
2.0
5
3
0
0 40 80 120 160 200
Q
rr
- Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
1
2
4
10ETF.. Series
T
J
= 150 °C
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 10 A
I
FM
= 8 A
20
12
0
0 40 80 120 160 200
I
rr
- Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
4
8
16
10ETF.. Series
T
J
= 25 °C
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 10 A
I
FM
= 8 A
VS-10ETF1...-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
5
Document Number: 96211
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
25
15
0
0 40 80 120 160 200
I
rr
- Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
5
10
20
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
I
FM
= 8 A
VS-10ETF1...-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
6
Document Number: 96211
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-10ETF10-M3 50 1000 Antistatic plastic tube
VS-10ETF12-M3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96156
Part marking information www.vishay.com/doc?95391
2 - Current rating (10 = 10 A)
3 - Circuit conguration:
E = single
4 - Package:
T = 2L TO-220AC
5 - Type of silicon:
F = fast soft recovery rectier
6 - Voltage code x 100 = V
RRM
7
10 = 1000 V
12 = 1200 V
Device code
62 43 5 7
10 E T F 12 -M3
VS-
-Vishay Semiconductors product
1
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
- Environmental digit
1
P1-P3P4-P6P7-P8

VS-10ETF10-M3

Mfr. #:
Buy VS-10ETF10-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers New Input Diodes - TO-220-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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