74AHC1G09GV,125

74AHC1G09_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 18 December 2007 3 of 10
NXP Semiconductors
74AHC1G09
2-input AND gate with open-drain output
8. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP5 and SC-74A packages: above 87.5 °C the value of P
tot
derates linearly with 4.0 mW/K.
9. Recommended operating conditions
10. Static characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +7.0 V
V
I
input voltage
[1]
0.5 +7.0 V
V
O
output voltage active mode
[1]
0.5 +7.0 V
high-impedance mode
[1]
0.5 +7.0 V
I
IK
input clamping current V
I
< 0.5 V
[1]
- 20 mA
I
OK
output clamping current V
O
< 0.5 V
[1]
- ±20 mA
I
O
output current V
O
> 0.5 V - 25 mA
I
CC
supply current - ±75 mA
I
GND
GND current - ±75 mA
T
stg
storage temperature 65 +150 °C
P
tot
total power dissipation T
amb
= 40 °C to +125 °C
[2]
- 250 mW
Table 6. Recommended operating operations
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 2.0 5.0 5.5 V
V
I
input voltage 0 - 5.5 V
V
O
output voltage active mode 0 - V
CC
V
high-impedance mode 0 - 6.0 V
T
amb
ambient temperature 40 +25 +125 °C
t/V input transition rise and fall rate V
CC
= 3.0 V to 3.6 V - - 100 ns/V
V
CC
= 4.5 V to 5.5 V - - 20 ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C 40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V 1.5 - - 1.5 - 1.5 - V
V
CC
= 3.0 V 2.1 - - 2.1 - 2.1 - V
V
CC
= 5.5 V 3.85 - - 3.85 - 3.85 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - - 0.5 - 0.5 - 0.5 V
V
CC
= 3.0 V - - 0.9 - 0.9 - 0.9 V
V
CC
= 5.5 V - - 1.65 - 1.65 - 1.65 V
74AHC1G09_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 18 December 2007 4 of 10
NXP Semiconductors
74AHC1G09
2-input AND gate with open-drain output
11. Dynamic characteristics
[1] t
pd
is the same as t
PZL
and t
PLZ
.
[2] Typical values are measured at V
CC
= 3.3 V.
[3] Typical values are measured at V
CC
= 5.0 V.
[4] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
=C
PD
× V
CC
2
× f
i
× N + (C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
× V
CC
2
× f
o
) = dissipation due to the output if the combination of the pull up voltage and resistance results in V
CC
at the output.
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 50 µA; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 50 µA; V
CC
= 3.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 50 µA; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.36 - 0.44 - 0.55 V
I
O
= 8.0 mA; V
CC
= 4.5 V - - 0.36 - 0.44 - 0.55 V
I
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
--±0.1 - ±1.0 - ±2.0 µA
I
OZ
OFF-state
output current
V
I
= V
IH
or V
IL
; V
O
= V
CC
or
GND; V
CC
= 5.5 V
--±0.25 ±2.5 ±10.0 µA
I
CC
supply current V
I
=V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
- - 1.0 - 10 - 20 µA
C
I
input
capacitance
- 1.5 10 - 10 - 10 pF
Table 7. Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C 40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
Table 8. Dynamic characteristics
GND = 0 V; for test circuit see Figure 6.
Symbol Parameter Conditions 25 °C 40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
t
pd
propagation delay A and B to Y;
see
Figure 5
[1]
V
CC
= 3.0 V to 3.6 V
[2]
C
L
= 15 pF - 4.6 7.5 1.0 8.5 1.0 9.0 ns
C
L
= 50 pF - 6.5 11.0 1.5 12.0 1.5 12.5 ns
V
CC
= 4.5 V to 5.5 V
[3]
C
L
= 15 pF - 3.2 5.5 1.0 6.5 1.0 7.0 ns
C
L
= 50 pF - 4.6 7.5 1.5 8.0 1.5 8.5 ns
C
PD
power dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz;
V
I
= GND to V
CC
[4]
-5- - - - - pF
74AHC1G09_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 18 December 2007 5 of 10
NXP Semiconductors
74AHC1G09
2-input AND gate with open-drain output
12. Waveforms
Measurement points are given in Table 9.
V
OL
is the typical voltage output level that occur with the output load.
Fig 5. The data input (A, B) to output (Y) propagation delays
001aad602
t
PZL
t
PLZ
GND
V
I
V
CC
V
OL
V
M
V
M
V
X
Y
output
A, B input
Table 9. Measurement points
Input Output
V
M
V
M
V
X
0.5V
CC
0.5V
CC
V
OL
+ 0.3 V
Test data is given in Table 10.
Definitions for test circuit:
C
L
= Load capacitance including jig and probe capacitance.
R
T
= Termination resistance should be equal to output impedance Z
o
of the pulse generator.
Fig 6. Load circuit for switching times
open
GND
V
CC
V
CC
V
I
V
O
mna232
D.U.T.
C
L
R
T
R
L
=
1000
PULSE
GENERATOR
S
1
Table 10. Test data
Input Load S
1
V
I
t
r
, t
f
R
L
C
L
t
PHZ
, t
PZH
t
PLZ
, t
PZL
t
PLH
, t
PHL
GND to V
CC
3.0 ns 1000 15 pF GND V
CC
open
GND to V
CC
3.0 ns 1000 50 pF GND V
CC
open

74AHC1G09GV,125

Mfr. #:
Manufacturer:
Nexperia
Description:
Logic Gates 5V 1G 2-INPUT AND
Lifecycle:
New from this manufacturer.
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