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Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
Vishay Siliconix
DG641, DG642, DG643
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (for DG642)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 3 V
V
INH
= 2.4 V, V
INL
= 0.8 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Unit Min.
b
Typ.
c
Max.
b
Analog Switch
Analog Signal Range
d
V
ANALOG
V- = - 5 V, V+ = 12 V Full - 5 8
V
V- = GND V, V+ = 12 V Full 0 8
Drain-Source On-Resistance R
DS(on)
I
S
= - 10 mA, V
D
= 0 V
Room
Full
58
9
R
DS(on)
Match R
DS(on)
Room
0.5
1
Source Off Leakage Current I
S(off)
V
S
= 0 V, V
D
= 10 V
Room
Full
- 10
- 200
- 0.04 10
200
nADrain Off Leakage Current I
D(off)
V
S
= 10 V, V
D
= 0 V
Room
Full
- 10
- 200
- 0.04 10
200
Channel On Leakage Current I
D(on)
V
S
= V
D
= 0 V
Room
Full
- 10
- 200
- 0.2 10
200
Digital Control
Input Voltage High V
INH
Full 2.4
V
Input Voltage Low V
INL
Full 0.8
Input Current I
IN
V
IN
= GND or V+
Room
Full
- 1
- 20
0.05 1
20
µA
Dynamic Characteristics
On State Input Capacitance
d
C
S(on)
V
S
= V
D
= 0 V Room 19 40
pFOff State Input Capacitance
d
C
S(off)
V
D
= 0 V Room 8 20
Off State Output Capacitance
d
C
D(off)
V
S
= 0 V Room 8 20
Bandwidth BW R
L
= 50 see figure 6 Room 500
MHz
Tur n On Ti m e t
ON
R
L
= 1 kC
L
= 35 pF
see figure 2
Room
Full
60 100
160
ns
Turn Off Time t
OFF
Room
Full
40 60
100
Charge Injection Q
C
L
= 1000 pF, V
D
= 0 V
see figure 3
Room - 40 pC
Off Isolation
R
IN
= 75 R
L
= 75
f = 5 MHz, see figure 4
Room - 63
dB
All Hostie Crosstalk X
TAL K( AH)
R
IN
= 10 , R
L
= 75
f = 5 MHz, see figure 5
Room - 85
Power Supplies
Positive Supply Current I+
V
IN
= 0 V or V
IN
= 5 V
Room
Full
3.5 6
9
mA
Negative Supply Current I-
Room
Full
- 6
- 9
- 3
