OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DG642DY-T1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
Vishay Siliconix
DG641, DG642, DG643
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
www.vishay.com
1
Low On-Resistance Wideband/Video Switches
FEATURES
• Wide bandwidth: 500 MHz
• Low crosstalk at 5 MHz: - 85 dB
•Low R
DS(on)
: 5 , DG642
• TTL logic compatible
• Fast switching: t
ON
50 ns
• Single supply compatibility
• High current: 100 mA, DG642
BENEFITS
• High precision
• Improved frequency response
• Low insertion loss
• Improved system performance
• Reduced board space
• Low power consumption
APPLICATIONS
• RF and video switching
• RGB switching
• Video routing
• Cellular communications
•ATE
• Radar/FLIR systems
• Satellite receivers
• Programmable filters
DESCRIPTION
The DG641, DG642, DG643 are high performance
monolithic video switches designed for switching wide
bandwidth analog and digital signals. DG641 is a quad
SPST, DG642 is a single SPDT, and DG643 is a dual SPDT
function. These devices have exceptionally low
on-resistances (5 typ-DG642), low capacitance and high
current handling capability.
To achieve TTL compatibility, low channel capacitances and
fast switching times, the DG641, DG642, DG643 are built on
the Vishay Siliconix proprietary D/CMOS process. Each
switch conducts equally well in both directions when on, and
blocks up to 14 V
p-p
when off. An epitaxial layer prevents
latchup.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic “0” 0.8 V
Logic “1” 2.4 V
Logic “0” 0.8 V
Logic “1” 2.4 V
Logic “0” 0.8 V
Logic “1”2.4 V
TRUTH TABLE (DG641)
Logic Switch
0 OFF
1ON
DG641
IN
1
IN
2
D
1
D
2
S
1
S
2
V- V+
GND GND
S
4
S
3
D
4
D
3
IN
4
IN
3
Dual-In-Line and SOIC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
TRUTH TABLE (DG642)
Logic SW
1
SW
2
0 OFF ON
1ONOFF
DG642
D
2
GND
Dual-In-Line and SOIC
S
2
S
1
IN
D
1
V+
V
-
1
2
3
4
8
7
6
5
Top View
TRUTH TABLE (DG643)
Logic SW
1
, SW
2
SW
3
, SW
4
0 OFF ON
1ONOFF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
IN
1
IN
2
D
1
D
2
GND GND
S
1
S
2
V- V+
S
4
S
3
GND GND
D
4
D
3
Dual-In-Line and SOIC
DG643
www.vishay.com
2
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
Vishay Siliconix
DG641, DG642, DG643
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7.6 mW/°C above 75 °C.
d. Derate 6 mW/°C above 75 °C.
e. Derate 80 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (Typical Channel)
ORDERING INFORMATION
Temp. Range Package Part Number
DG641
- 40 °C to 85 °C
16-Pin Plastic DIP DG641DJ
16-Pin Narrow SOIC DG641DY
DG642
- 40 °C to 85 °C
8-Pin Plastic DIP DG642DJ
8-Pin Narrow SOIC DG642DY
DG643
- 40 °C to 85 °C
16-Pin Plastic DIP DG643DJ
16-Pin Narrow SOIC DG643DY
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
V+ to V- - 0.3 to 21
V
V+ to GND - 0.3 to 21
V- to GND - 19 to + 0.3
Digital Inputs
(V-) - 0.3 V to (V+) + 0.3 V
or 20 mA, whichever occurs first
V
S
, V
D
(V-) - 0.3 V to (V+) + 14 V
or 20 mA, whichever occurs first
Continuous Current (Any terminal except S or D) 20
mA
Continuous Current S or D
DG641, DG643 75
DG642 100
Current, S or D
(Pulsed at 1 ms, 10 % duty cycle max)
DG641, DG643 200
DG642 300
Storage Temperature - 65 to 125 °C
Power Dissipation (Package)
b
8-Pin Plastic DIP and Narrow SOIC
c
300
mW16-Pin Plastic DIP
d
470
16-Pin Narrow SOIC
e
600
Figure 1.
D
S
V+
IN
V-
5 V
Reg
GND
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
www.vishay.com
3
Vishay Siliconix
DG641, DG642, DG643
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guaranteed by design, not subject to production test.
e. V
IN
= input voltage to perform proper function.
SPECIFICATIONS (for DG641 and DG643)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 3 V
V
INH
= 2.4 V, V
INL
= 0.8 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Unit Min.
b
Typ.
c
Max.
b
Analog Switch
Analog Signal Range
d
V
ANALOG
V- = - 5 V, V+ = 12 V Full - 5 8
V
V- = GND V, V+ = 12 V Full 0 8
Drain-Source On-Resistance R
DS(on)
I
S
= - 10 mA, V
D
= 0 V
Room
Full
815
20
R
DS(on)
Match R
DS(on)
Room
1
2
Source Off Leakage Current I
S(off)
V
S
= 0 V, V
D
= 10 V
Room
Full
- 10
- 100
- 0.02 10
100
nADrain Off Leakage Current I
D(off)
V
S
= 10 V, V
D
= 0 V
Room
Full
- 10
- 100
- 0.02 10
100
Channel On Leakage Current I
D(on)
V
S
= V
D
= 0 V
Room
Full
- 10
- 100
- 0.1 10
100
Digital Control
Input Voltage High V
INH
Full 2.4
V
Input Voltage Low V
INL
Full 0.8
Input Current I
IN
V
IN
= GND or V+
Room
Full
- 1
- 20
0.05 1
20
µA
Dynamic Characteristics
On State Input Capacitance
d
C
S(on)
V
S
= V
D
= 0 V Room 10 20
pFOff State Output Capacitance
d
C
S(off)
V
S
= 0 V Room 4 12
Off State Input Capacitance
d
C
D(off)
V
D
= 0 V Room 4 12
Bandwidth BW R
L
= 50 see figure 6 Room 500
MHz
Tu r n O n T i m e t
ON
R
L
= 1 kC
L
= 35 pF
see figure 2
Room
Full
50 70
140
ns
Turn Off Time t
OFF
Room
Full
28 50
85
Charge Injection Q
C
L
= 1000 pF, V
D
= 0 V
see figure 3
Room - 19 pC
Off Isolation OIRR
R
IN
= 75 R
L
= 75
f = 5 MHz, see figure 4
Room - 60
dB
All Hostie Crosstalk X
TA LK
R
IN
= 10 , R
L
= 75
f = 5 MHz, see figure 5
Room - 87
Power Supplies
Positive Supply Current I+
V
IN
= 0 V or V
IN
= 5 V
Room
Full
3.5 6
9
mA
Negative Supply Current I-
Room
Full
- 6
- 9
- 3
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

DG642DY-T1

Mfr. #:
Buy DG642DY-T1
Manufacturer:
Vishay / Siliconix
Description:
Video Switch ICs RECOMMENDED ALT 78-DG612EEY-T1-GE4
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet