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IRLU3714PBF

P1-P3P4-P6P7-P9P10-P11
www.irf.com 1
1/11/05
IRLR3714PbF
IRLU3714PbF
SMPS MOSFET
HEXFET
®
Power MOSFET
Notes through are on page 10
Applications
Benefits
l Ultra-Low Gate Impedance
l Very Low R
DS(on)
at 4.5V V
GS
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
PD - 95554A
l Lead-Free
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 20 V
V
GS
Gate-to-Source Voltage ± 20 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 36
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ 10V 31 A
I
DM
Pulsed Drain Current 140
P
D
@T
C
= 25°C Maximum Power Dissipation 47 W
P
D
@T
C
= 70°C Maximum Power Dissipation 33 W
Linear Derating Factor 0.31 W/°C
T
J
, T
STG
Junction and Storage Temperature Range -55 to + 175 °C
Absolute Maximum Ratings
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.2
R
θJA
Junction-to-Ambient ––– 50
R
θJA
Junction-to-Ambient (PCB mount) ––– 110
°C/W
D-Pak
IRLR3714
I-Pak
IRLU3714
V
DSS
R
DS(on)
max I
D
20V 20mΩ 36A
IRLR/U3714PbF
2 www.irf.com
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
–––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
–––
p-n junction diode.
––– ––– 1.3 V T
J
= 25°C, I
S
= 18A, V
GS
= 0V
––– 0.88 ––– T
J
= 125°C, I
S
= 18A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 35 53 ns T
J
= 25°C, I
F
= 18A, V
R
=10V
Q
rr
Reverse Recovery Charge ––– 34 51 nC di/dt = 100A/µs
t
rr
Reverse Recovery Time ––– 35 53 ns T
J
= 125°C, I
F
= 18A, V
R
=10V
Q
rr
Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/µs
Parameter Min. Typ. Max.Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.022 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 15 20 V
GS
= 10V, I
D
= 18A
––– 21 28 V
GS
= 4.5V, I
D
= 14A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 16V, V
GS
= 0V
––– ––– 100 V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 72 mJ
I
AR
Avalanche Current ––– 14 A
Avalanche Characteristics
S
D
G
Diode Characteristics
A
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 17 ––– ––– S V
DS
= 10V, I
D
= 14A
Q
g
Total Gate Charge ––– 6.5 9.7 I
D
= 14A
Q
gs
Gate-to-Source Charge ––– 1.8 ––– nC V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 2.9 ––– V
GS
= 4.5V
Q
oss
Output Gate Charge ––– 7.1 ––– V
GS
= 0V, V
DS
= 10V
t
d(on)
Turn-On Delay Time ––– 8.7 ––– V
DD
= 10V
t
r
Rise Time ––– 78 ––– I
D
= 14A
t
d(off)
Turn-Off Delay Time ––– 10 ––– R
G
= 1.8Ω
t
f
Fall Time ––– 4.5 ––– V
GS
= 4.5V
C
iss
Input Capacitance ––– 670 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 470 ––– V
DS
= 10V
C
rss
Reverse Transfer Capacitance ––– 68 ––– pF ƒ = 1.0MHz
V
SD
Diode Forward Voltage
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
36
140
mΩ
IRLR/U3714PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.0V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
36A
2.0 4.0 6.0 8.0 10.0
V
GS
, Gate-to-Source Voltage (V)
1.00
10.00
100.00
1000.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
20µs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P11

IRLU3714PBF

Mfr. #:
Buy IRLU3714PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 36A I-PAK
Lifecycle:
New from this manufacturer.
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