This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
August 2012 Doc ID 023419 Rev 1 1/11
11
STI360N4F6, STP360N4F6
N-channel 40 V, 120 A STripFET™ VI DeepGATE™
Power MOSFET in I²PAK and TO-220 packages
Datasheet − preliminary data
Features
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest R
DS(on)
in all packages.
Figure 1. Internal schematic diagram
Order codes V
DSS
R
DS(on)
max
I
D
STI360N4F6
40 V < 1.8 mΩ 120 A
(1)
1. Current limited by package
STP360N4F6
TO-220
I²PAK
1
2
3
TAB
1
2
3
TAB
!-V
$4!"
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STI360N4F6
360N4F6
I²PAK
Tube
STP360N4F6 TO-220
www.st.com
