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SI2308BDS-T1-E3

P1-P3P4-P6P7-P9P10-P10
Vishay Siliconix
Si2308BDS
www.vishay.com
4
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
1
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
0.1
10
1.2
1.5
1.
8
2.1
2.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.10
0.15
0.20
0.25
0.30
0.35
345678 910
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=1.9A
0
10
2
4
)W
(
rewo
P
Time (s)
1 600 10
6
0.1 0.01
100
T
A
= 25 °C
Single Pulse
8
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)I
D
10
0.1
0.1 1 10
1
T
A
= 25 °C
Single Pulse
1ms
10 ms
100 ms
0.01
1s,10s
DC
BVDSS Limited
100
100 µs
Limited byR
DS(on)
*
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
www.vishay.com
5
Vishay Siliconix
Si2308BDS
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
0.6
1.2
1.8
2.4
3.0
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating, Junction-to-Case
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
Vishay Siliconix
Si2308BDS
www.vishay.com
6
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69958
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 600 10
-1
10
-4
100
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e f f E d e z i l a m r o N
e c n a d e p m I l a m r e h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
1 10 10
-1
10
-4
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v
i
t c e
f
f
E d e z i l a m
r
o N
e c n a d e
p
m I
l a
m
r
e
h T
P1-P3P4-P6P7-P9P10-P10

SI2308BDS-T1-E3

Mfr. #:
Buy SI2308BDS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds 20V Vgs SOT-23
Lifecycle:
New from this manufacturer.
Delivery:
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