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IRLU7843-701PBF
P1-P3
P4-P6
P7-P9
P10-P11
IRLR/U7843PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rai
n-t
o-Source V
ol
tage (
V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
2
04
06
08
0
Q
G
Tot
al
Gat
e Char
ge (nC
)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
VDS= 15
V
I
D
= 12A
0.0
0.5
1.0
1.5
V
SD
, S
ource-
toD
rai
n Volt
age (V
)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
0.1
1.0
10.
0
100.0
1000.
0
V
DS
, D
rai
n-t
oS
ource V
ol
tage (
V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
= 175°C
Si
ngl
e Pul
se
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
IRLR/U7843PbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
T
C
, C
ase Tem
perat
ure (
°C
)
0
40
80
120
160
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIM
ITED BY PACKAGE
-75
-5
0
-2
5
0
25
50
75
100
125
150
175
T
J
, T
emper
atur
e ( °
C
)
0.0
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangul
ar
Pul
se Dur
at
ion (
sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.
50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1
/t2
2. P
eak Tj
= P dm x Z
t
hjc +
Tc
Ri (°C/W)
τ
i (sec)
0.5084 0.000392
0.5423 0.011108
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
IRLR/U7843PbF
6
www.irf.com
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
T
ype
as
D.U.T
.
Current
Sampling
Resistors
+
-
Fig 13.
Gate Charge Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
25
50
75
100
125
150
175
St
art
i
ng T
J
, Junct
i
on Tem
perat
ure (
°C
)
0
1000
2000
3000
4000
5000
6000
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
8.6
A
9.6
A
BOTTOM
12A
Fig 14a.
Switching Time Test Circuit
Fig 14b.
Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
V
GS
Pulse
Width < 1µ
s
D
uty Fact
or < 0.1%
V
DD
V
DS
L
D
D.U
.T
+
-
P1-P3
P4-P6
P7-P9
P10-P11
IRLU7843-701PBF
Mfr. #:
Buy IRLU7843-701PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 161A IPAK
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
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EMS
Payment:
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