NZQA5V6XV5T1G Series
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
Uni−Directional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Value Unit
Peak Power Dissipation (8 X 20 ms @ T
A
= 25°C) (Note 1)
P
PK
100 W
Steady State Power − 1 Diode (Note 2) P
D
300 mW
Thermal Resistance Junction to Ambient
Above 25°C, Derate
R
q
JA
370
2.7
°C/W
mW/°C
Maximum Junction Temperature T
Jmax
150 °C
Operating Junction and Storage Temperature Range T
J
T
stg
−55 to +150 °C
ESD Discharge MIL STD 883C − Method 3015−6
IEC1000−4−2, Air Discharge
IEC1000−4−2, Contact Discharge
V
PP
16
30
30
kV
Lead Solder Temperature (10 seconds duration) T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Device*
Device
Marking
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RM
V
C
Max @ I
PP
Typ Capacitance
@ 0 V Bias
(Note 3)
Max
V
F
@ I
F
=
200 mA
Min Nom Max V
RWM
I
RWM
(mA)
V
C
(V) I
PP
(A) (pF) (V)
NZQA5V6XV5T1G 56 5.32 5.6 5.88 3.0 1.0 10.5 10 90 1.3
NZQA6V2XV5T1G 62 5.89 6.2 6.51 4.0 0.5 11.5 9.0 80 1.3
NZQA6V8XV5T1G 68 6.46 6.8 7.14 4.3 0.1 12.5 8.0 70 1.3
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes SZ−prefix devices where applicable.
1. Non−repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR−4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, V
R
= 0 V, T
A
= 25°C
