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EC4H09C-TL-H

P1-P3
EC4H09C
No. A1267-1/3
www.semiconductor-sanyo.com/network
Ordering number : ENA1267
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
80608AB TI IM TC-00001513
SANYO Semiconductors
DATA SHEET
EC4H09C
NPN Epitaxial Planar Silicon Transistor
UHF to X Band Low-Noise Amplifier
and OSC Applications
Features
•
High cut-off frequency : f
T
=26GHz typ (V
CE
=3V).
• Low operating voltage.
•
High gain : ⏐S21e⏐
2
=16.5dB typ (f=2GHz).
•
Halogen free compliance (UL94 HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to- Base Voltage V
CBO
10 V
Collector-to-Emitter Voltage V
CEO
3.5 V
Emitter-to-Base Voltage V
EBO
2.5 V
Collector Current I
C
40 mA
Collector Dissipation P
C
120 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=5V, I
E
=0A 1 μA
Emitter Cutoff Current I
EBO
V
EB
=1V, I
C
=0A 1 μA
DC Current Gain h
FE
V
CE
=1V, I
C
=5mA 70 150
Gain-Bandwidth Product f
T
V
CE
=3V, I
C
=20mA 20 26 GHz
Reverse Transfer Capacitance Cre V
CB
=1V, f=1MHz 0.12 pF
Marking : M Continued on next page.
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
EC4H09C
No. A1267-2/3
Continued from preceding page.
Ratings
Parameter Symbol Conditions
min typ max
Unit
Forward Transfer Gain
⏐
S21e
⏐
2
1V
CE
=1V, I
C
=10mA, f=2GHz 15 dB
⏐
S21e
⏐
2
2V
CE
=3V, I
C
=20mA, f=2GHz 13 16.5 dB
Noise Figure NF V
CE
=1V, I
C
=5mA, f=2GHz 1.3 1.8 dB
Package Dimensions Electrical Connection (Top view)
unit : mm (typ)
7036-002
2
4
1
3
3
1
4
2
0.5
0.2
0.3
0.8
1.0
0.6
0.6
Top View
Bottom View
Polarity Discriminating Mark
1 : Base
2 : Emitter
3 : Collector
4 : Emitter
SANYO : ECSP1008-4
Base
Emitter
Emitter
Collector
Base
Emitter
Collector
Emitter
Polarity mark (Top)
*Electrodes : Bottom
Polarity mark (Top)
Collector-to-Base Voltage, V
CB
--
V
Cre -- V
CB
Reverse Transfer Capacitance, Cre -- pF
Collector Current, I
C
-- mA
h
FE
--
I
C
DC Current Gain, h
FE
Collector-to-Emitter Voltage, V
CE
-- V
Collector Current, I
C
-- mA
Base-to-Emitter Voltage, V
BE
-- V
I
C
-- V
BE
Collector Current, I
C
-- mA
I
C
-- V
CE
IT13887
0 0.2 0.4 0.6 0.8 1.0 1.2
IT13888
IT13889
0321
0
3
6
9
15
12
0
3
6
9
15
12
V
CE
=1V
3V
I
B
=0μA
30
μ
A
60
μ
A
90
μ
A
120
μ
A
150μA
2
3
3
5
7
100
3257 723 5
V
CE
=3V
1.0 10
1V
7
3
5
3
2
0.1
325
100.1
73257
1.0
f=1MHz
IT13899
EC4H09C
No. A1267-3/3
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
This catalog provides information as of August, 2008. Specifications and information herein are subject
to change without notice.
Collector Current, I
C
-- mA
NF
-- I
C
Noise Figure, NF
--
dB
Ambient Temperature, Ta -- °C
P
C
-- Ta
Collector Dissipation, P
C
-- mW
Collector Current, I
C
-- mA
⏐S21e⏐
2
-- I
C
Forward Transfer Gain, ⏐S21e⏐
2
-- dB
Collector Current, I
C
-- mA
f
T
-- I
C
Gain-Bandwidth Product, f
T
-- GHz
0 25 50 75 100 125 150 175
IT13894
0
0
120
140
100
80
20
60
40
20
18
16
14
12
10
8
6
10
325 3572 7
1.0
IT13891
f=2GHz
V
CE
=3V
1V
f=2GHz
IT13892
7
2
3
5
7
5
10
1.0
7223 5 3 57
10
V
CE
=3V
1V
IT13900
1.0
2735
10
23
0
0.5
1.5
1.0
2.0
2.5
3.0
V
CE
=1V
f=2GHz
Z
S
=Zsopt
P1-P3

EC4H09C-TL-H

Mfr. #:
Buy EC4H09C-TL-H
Manufacturer:
ON Semiconductor
Description:
RF TRANS NPN 3.5V 26GHZ ECSP1008
Lifecycle:
New from this manufacturer.
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