FFPF60SB60DSTU Datasheet FFPF60SB60DSTU | P1-P3

tm

FFPF60SB60DS

FFPF60SB60DS Rev. A

www.fairchildsemi.com1

March 2008

STEALTH

II Rectifier

TM

FFPF60SB60DS

Features

• High Speed Switching, t

rr

< 25ns @ I

F

= 4A

• High Reverse Voltage and High Reliability

• RoHS compliant

Applications

• General Purpose

• Switching Mode Power Supply

• Boost Diode in continuous mode power factor corrections

• Power switching circuits

4A, 600V STEALTH

TM

II Rectifier

The FFPF60SB60DS is STEALTH

TM

II rectifier with soft recovery

characteristics. It is silicon nitride passivated ion-implanted epi-

taxial planar construction.

This device is intended for use as freewheeling of boost diode in

switching power supplies and other power swithching applica-

tions. Their low stored charge and hyperfast soft recovery mini-

mize ringing and electrical noise in many power switching circuits

reducing power loss in the switching transistors.

Absolute Maximum Ratings T

C

= 25

o

C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

V

RRM

Peak Repetitive Reverse Voltage 600 V

V

RWM

Working Peak Reverse Voltage 600 V

V

R

DC Blocking Voltage 600 V

I

F(AV)

Average Rectified Forward Current @ T

C

= 100

o

C 4 A

I

FSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

40 A

T

J

, T

STG

Operating and Storage Temperature Range -65 to +150

o

C

Symbol Parameter Ratings Units

R

θJC

Maximum Thermal Resistance, Junction to Case 8.7

o

C/W

Device Marking Device Package Reel Size Tape Width Quantity

FFPF60SB60DS FFPF60SB60DSTU TO220F - - 50

1. Cathode 2. Anode(Cathode) 3. Anode

TO220F

1

3

2

FFPF60SB60DS

FFPF60SB60DS Rev. A

www.fairchildsemi.com2

Electrical Characteristics T

C

= 25

o

C unless otherwise noted

Symbol Parameter Min. Typ. Max. Units

V

FM

1

I

F

= 4A

I

F

= 4A

T

C

= 25

o

C

T

C

= 125

o

C

-

2.2

1.7

2.6

-

V

I

RM

1

V

R

= 600V

V

R

= 600V

T

C

= 25

o

C

T

C

= 125

o

C

-

100

500

µA

t

rr

I

F

= 1A, di/dt = 100A/µs, V

R

= 30V T

C

= 25

o

C - 16 23 ns

t

rr

I

rr

S factor

Q

rr

I

F

= 4A, di/dt = 200A/µs, V

R

= 390V T

C

= 25

o

C

-

18

2

0.7

18

25

-

ns

A

nC

t

rr

I

rr

S factor

Q

rr

I

F

= 4A, di/dt = 200A/µs, V

R

= 390V T

C

= 125

o

C

-

45

2.8

1.8

64

-

ns

A

nC

W

AVL

Avalanche Energy ( L = 40mH) 5 - - mJ

Test Circuit and Waveforms

Notes:

1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%

FFPF60SB60DS

FFPF60SB60DS Rev. A

www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current

vs. Forward Current vs. Reverse Voltage

Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time

vs. di/dt

Figure 5. Typical Reverse Recovery Figure 6. Forward Current Derating Curve

Current vs. di/dt

100 200 300 400 500 600

1E-3

0.01

0.1

1

10

T

C

= 75

o

C

T

C

= 25

o

C

T

C

= 125

o

C

Reverse Current , I

R

[µA]

Reverse Voltage, V

R

[V]

10

40

012345

0.1

1

10

75

o

C

T

C

= 125

o

C

Forward Current, I

F

[A]

Forward Voltage, V

F

[V]

25

o

C

50

0.1 1 10 100

0

10

20

30

40

50

Typical Capacitance

at 0V = 43 pF

Capacitances , Cj [pF]

Reverse Voltage, V

R

[V]

100 200 300 400 500 600

10

20

30

40

50

60

T

C

= 75

o

C

T

C

= 25

o

C

T

C

= 125

o

C

Reverse Recovery Time, t

rr

[ns]

di/dt [A/µs]

100 200 300 400 500 600

1

2

3

4

5

6

7

T

C

= 125

o

C

T

C

= 25

o

C

T

C

= 75

o

C

Reverse Recovery Current, I

rr

[A]

di/dt [A/µs]

25 50 75 100 125 150

0

3

6

9

Average Forward Current, I

F(AV)

[A]

Case temperature, T

C

[

o

C]

FFPF60SB60DSTU

FFPF60SB60DSTU

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