Data Sheet ADF4153A
Rev. A | Page 3 of 24
SPECIFICATIONS
AV
DD
= DV
DD
= SDV
DD
= 2.7 V to 3.3 V; V
P
= AV
DD
to 5.5 V; AGND = DGND = 0 V; T
A
= T
MIN
to T
MAX
, unless otherwise noted;
dBm referred to 50.
Table 1.
Parameter Min Typ Max Unit Test Conditions/Comments
RF INPUT CHARACTERISTICS (3 V)
See
Figure 12 for an input circuit
RF Input Frequency (RF
IN
) 0.5 4 GHz 8 dBm minimum/0 dBm maximum
1 4 GHz 10 dBm minimum/0 dBm maximum
For lower frequencies, ensure slew rate
(SR) > 400 V/µs
REF
IN
CHARACTERISTICS
See
Figure 11 for an input circuit
REF
IN
Input Frequency 10 250 MHz For f < 10 MHz, use a dc-coupled,
CMOS-compatible square wave;
slew rate > 25 V/µs
REF
IN
Input Sensitivity 0.7 AV
DD
V p-p Biased at AV
DD
/2
1
REF
IN
Input Capacitance 10 pF
REF
IN
Input Current ±100 µA
PHASE DETECTOR
Phase Detector Frequency 32 MHz
CHARGE PUMP
I
CP
Sink/Source
Programmable; see
Figure 19
High Value 5 mA With R
SET
= 4.7 kΩ
Low Value
312.5
µA
With R
SET
= 4.7 kΩ
Absolute Accuracy 2.5 % With R
SET
= 4.7 kΩ
R
SET
Range 3.0 10 kΩ
I
CP
Three-State Leakage Current 1 nA Sink and source current
Sink and Source Matching 2 % 0.5 V ≤ V
CP
≤ V
P
− 0.5 V
I
CP
vs. V
CP
2 % 0.5 V ≤ V
CP
≤ V
P
− 0.5 V
I
CP
vs. Temperature 2 % V
CP
= V
P
/2
LOGIC INPUTS
V
INH
, Input High Voltage 1.4 V
V
INL
, Input Low Voltage
0.6
V
I
INH
/I
INL
, Input Current ±1 µA
C
IN
, Input Capacitance 10 pF
LOGIC OUTPUTS
V
OH
, Output High Voltage 1.4 V Open-drain 1 kΩ pull-up to 1.8 V
V
OL
, Output Low Voltage 0.4 V I
OL
= 500 µA
POWER SUPPLIES
AV
DD
2.7 3.3 V
DV
DD
, SD
VDD
AV
DD
V
P
AV
DD
5.5 V
I
DD
20 24 mA
Low Power Sleep Mode 1 µA
NOISE CHARACTERISTICS
Normalized Phase Noise Floor (PN
SYNTH
)
2
−223 dBc/Hz PLL loop BW = 500 kHz
Normalized 1/f Noise (PN
1_f
)
3
−121 dBc/Hz Measured at 10 kHz offset, normalized to 1 GHz
Phase Noise Performance
4
@ VCO output
1750 MHz Output
5
107 dBc/Hz @ 5 kHz offset, 25 MHz PFD frequency
1
AC coupling ensures AV
DD
/2 bias.
2
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log(N) (where N is the N divider
value) and 10 log(F
PFD
). PN
SYNTH
= PN
TOT
− 10 log(F
PFD
) − 20 log(N).
3
The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency, F
RF
,
and at an offset frequency, f, is given by PN = P
1_f
+ 10 log(10 kHz/f) + 20 log(F
RF
/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in ADIsimPLL.
4
The phase noise is measured with the EV-ADF4153ASD1Z and the Rohde & Schwarz FSUP spectrum analyzer operating in phase noise mode.
5
f
REFIN
= 100 MHz; F
PFD
= 25 MHz; offset frequency = 5 kHz; RF
OUT
= 1750 MHz; N = 70; loop BW = 20 kHz; lowest noise mode.
ADF4153A Data Sheet
Rev. A | Page 4 of 24
TIMING SPECIFICATIONS
AV
DD
= DV
DD
= SDV
DD
= 2.7 V to 3.3 V; V
P
= AV
DD
to 5.5 V; AGND = DGND = 0 V; T
A
= T
MIN
to T
MAX
, unless otherwise noted;
dBm referred to 50.
Table 2.
Parameter Limit at T
MIN
to T
MAX
Unit Test Conditions/Comments
t
1
20 ns min LE setup time
t
2
10 ns min DATA to CLK setup time
t
3
10 ns min DATA to CLK hold time
t
4
25 ns min CLK high duration
t
5
25 ns min CLK low duration
t
6
10 ns min CLK to LE setup time
t
7
20 ns min LE pulse width
CLK
DATA
LE
LE
DB23 (MSB) DB22 DB2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
1
t
2
t
3
t
7
t
6
t
4
t
5
11047-002
Figure 2. Timing Diagram
Data Sheet ADF4153A
Rev. A | Page 5 of 24
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, GND = AGND = DGND = 0 V,
V
DD
= AV
DD
= DV
DD
= SDV
DD
, unless otherwise noted.
Table 3.
Parameter Rating
V
DD
to GND
0.3 V to +4 V
DV
DD
to AV
DD
0.3 V to +0.3 V
SDV
DD
to AV
DD
0.3 V to +0.3 V
V
P
to GND 0.3 V to +5.8 V
V
P
to V
DD
0.3 V to +5.8 V
Digital I/O Voltage to GND
0.3 V to V
DD
+ 0.3 V
Analog I/O Voltage to GND 0.3 V to V
DD
+ 0.3 V
REF
IN
, RF
IN
to GND 0.3 V to V
DD
+ 0.3 V
Operating Temperature Range 40°C to +85°C
Storage Temperature Range 65°C to +125°C
Maximum Junction Temperature 150°C
TSSOP θ
JA
Thermal Impedance 112°C/W
LFCSP θ
JA
Thermal Impedance 30.4°C/W
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ESD CAUTION

ADF4153ABRUZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Phase Locked Loops - PLL Fractional-N Freq Synthesizer
Lifecycle:
New from this manufacturer.
Delivery:
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