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BC237

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1 Publication Order Number:
BC237/D
BC237, BC237B, BC237C,
BC239C
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BC237
BC239
V
CEO
45
25
Vdc
Collector−Emitter Voltage
BC237
BC239
V
CES
50
30
Vdc
Collector−Emitter Voltage
BC237
BC239
V
EBO
6.0
5.0
Vdc
Collector Current − Continuous I
C
100 mAdc
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
350
2.8
mW
mW/°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
1.0
8.0
W
mW/°C
Operating and Storage Temperature
Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
357 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
125 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
BC237 TO−92 5000 Units / Bulk
BC23xy = Device Code
x = 7 or 9
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING
DIAGRAM
TO−92
CASE 29
STYLE 17
1
2
3
BC237B TO−92 5000 Units / Bulk
BC237G TO−92
(Pb−Free)
5000 Units / Bulk
BC237BG TO−92
(Pb−Free)
5000 Units / Bulk
(Note: Microdot may be in either location)
http://onsemi.com
BC23
xy
AYWW G
G
COLLECTOR
1
2
BASE
3
EMITTER
BC237BRL1 TO−92 2000/Tape & Reel
BC237BZL1 TO−92 2000/Ammo Pack
BC237BRL1G TO−92
(Pb−Free)
2000/Tape & Reel
BC237BZL1G TO−92
(Pb−Free)
2000/Ammo Pack
BC237C TO−92 5000 Units / Bulk
BC237CG TO−92
(Pb−Free)
5000 Units / Bulk
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BC237, BC237B, BC237C, BC239C
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC237
(I
C
= 2.0 mA, I
B
= 0) BC239
V
(BR)CEO
45
25
−
−
−
−
V
Emitter−Base Breakdown Voltage BC237
(I
E
= 100 mA, I
C
= 0) BC239
V
(BR)EBO
6.0
5.0
−
−
−
−
V
Collector Cutoff Current
(V
CE
= 30 V, V
BE
= 0) BC239
(V
CE
= 50 V, V
BE
= 0) BC237
(V
CE
= 30 V, V
BE
= 0) T
A
= 125°C BC239
(V
CE
= 50 V, V
BE
= 0) T
A
= 125°C BC237
I
CES
−
−
−
−
0.2
0.2
0.2
0.2
15
15
4.0
4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V) BC237B
BC237C/239C
(I
C
= 2.0 mA, V
CE
= 5.0 V) BC237
BC237B
BC237C/239C
(I
C
= 100 mA, V
CE
= 5.0 V) BC237B
BC237C/239C
h
FE
−
−
120
200
380
−
−
150
270
−
290
500
180
300
−
−
800
460
800
−
−
−
Collector−Emitter On Voltage
(I
C
= 10 mA, I
B
= 0.5 mA) BC237/BC239
(I
C
= 100 mA, I
B
= 5.0 mA) BC237/BC239
V
CE(sat)
−
−
0.07
0.2
0.2
0.6
V
Base−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
V
BE(sat)
−
−
0.6
−
0.83
1.05
V
Base−Emitter On Voltage
(I
C
= 100 mA, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
V
BE(on)
−
0.55
−
0.5
0.62
0.83
−
0.7
−
V
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 0.5 mA, V
CE
= 3.0 V, f = 100 MHz) BC237
BC239
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz) BC237
BC239
f
T
−
−
150
150
100
140
200
280
−
−
−
−
MHz
Collector−Base Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
C
obo
− − 4.5 pF
Emitter−Base Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
C
ibo
− 8.0 − pF
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2.0 kW, f = 1.0 kHz) BC239
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC237
BC239
NF
−
−
−
2.0
2.0
2.0
4.0
10
4.0
dB
Figure 1.
BC237, BC237B, BC237C, BC239C
http://onsemi.com
3
2.0
1.5
1.0
0.2
0.3
0.4
0.6
0.8
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h
FE
, NORMALIZED DC CURRENT GAIN
V
CE
= 10 V
T
A
= 25°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.20.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
400
20
30
40
60
80
100
200
300
0.5 1.00.7 2.0 3.0 5.0 7.0 10 20 30 50
I
C
, COLLECTOR CURRENT (mAdc)
Figure 3. Current−Gain — Bandwidth Product
f
T
, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
V
CE
= 10 V
T
A
= 25°C
T
A
= 25°C
C
ib
C
ob
r
b
, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120
100.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Base Spreading Resistance
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25°C
P1-P3P4-P4

BC237

Mfr. #:
Buy BC237
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 50V NPN
Lifecycle:
New from this manufacturer.
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