MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200 V
Average Rectified Forward Current
(Rated V
R
, T
C
= 140°C)
Per Diode
Per Device
I
F(AV)
3.0
6.0
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 145°C)
Per Diode
I
F
6.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
I
FSM
50
A
Operating Junction and Storage Temperature Range T
J
, T
stg
−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Per Diode)
Characteristic
Symbol Value Unit
Thermal Resistance, Junction−to−Case
R
q
JC
9 °C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
JA
80 °C/W
1. Rating applies when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (Per Diode)
Characteristic
Symbol Value Unit
Maximum Instantaneous Forward Voltage Drop (Note 2)
(i
F
= 3 Amps, T
C
= 25°C)
(i
F
= 3 Amps, T
C
= 125°C)
(i
F
= 6 Amps, T
C
= 25°C)
(i
F
= 6 Amps, T
C
= 125°C)
v
F
1
0.96
1.2
1.13
V
Maximum Instantaneous Reverse Current (Note 2)
(T
J
= 25°C, Rated dc Voltage)
(T
J
= 125°C, Rated dc Voltage)
i
R
5
250
mA
Maximum Reverse Recovery Time
(I
F
= 1 Amp, di/dt = 50 Amps/ms, V
R
= 30 V, T
J
= 25°C)
(I
F
= 0.5 Amp, i
R
= 1 Amp, I
REC
= 0.25 A, V
R
= 30 V, T
J
= 25°C)
t
rr
35
25
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
